• [1]

    . Ennaoui A, Fiechter S, Goslowsky H et al. J. Electrochem.Soc., 1985, 132: 15792. Ferrer I J, Nevskaia D M, de Las Heras C et al. Solid StateCommun., 1990, 74: 9133. Ennaoui A, Fiechter S, Hopfner C et al. Sol. Energy Mater.Sol. Cells, 1993, 29: 2894. Birkholz M, Lichtenberger D, Hopfner C et al. Sol. EnergyMater. Sol. Cells,1992, 27: 2435. WU R, ZHENG Y F, ZHANG X G et al. Journal of CrystalGrowth, 2004, 266: 523—5276. BronoldM, Kubala S, Pettenkofer C et al. Thin Solid Films,1997, 304: 1787. Sasaki Y, Sugii S, Ishii K et al. J. Mater. Sci. Lett., 1999,18: 11938. Reijnen L, Meester B, Goossens A et al. J. Electrochem.Soc., 2000, 147: 18039. MENG L, LIU Y H, TIAN L et al. Journal of CrystalGrowth, 2003, 253: 530—53810. Ferrer I J, Snchez C. J. Appl. Phys., 1991, 70: 264111. de Las Heras C, Ferrer I J, Snchez C. J. Appl. Phys., 1993,74: 455112. Naoyuki Takahashi, Takuma Yatomi, Takato Nakamura.Solid State Sciences, 2004, 6: 1269—127213. Oertel J, Ellmer K, Bohne W et al. Journal of CrystalGrowth, 1999, 198-199: 1205—121014. WAN Dong-Yun, HE Qing, ZHANG Li-Peng. Journal ofCrystal Growth, 2004, 268: 222—22615. WAN D Y, WANG Y T, WANG B Y. J. Crystal Growth,2005, 53: 230