• [1]

    . Bergonzo P, Brambilla A, Tromson D et al. NIM, 2002,A476: 694-7002. Mainwood A. Diamond and Related Materials, 1998, 7:504-5093. Mainwood A. Semicond. Sci. Technol., 2000, 15: 55-634. Kagan H. Nuclear Instruments and Methods in Physics Research, 2005, A541: 221-2275. Marinelli M, Milani E, Paoletti A et al. Nuclear Instru-ments and Methods in Physics Research, 2002, A476:701-7056. Balducci A, Marinelli M, Milani E et al. App. Phys. Lett.,2005, 86: 0221087. ZHANG Ming-Long, GU Bei-Bei, WANG Lin-Jun et al.Physics Letters, 2004, A332: 320-3258. OUYANG Xiao-Ping, WANG Lan, FAN Ru-Yu et al. Chinese Physics, 2005, 55(5): 2170-2174(in Chinese)(欧阳晓平, 王兰, 范如玉等. 物理学报, 2005, 55(5): 2170-2174)9. LIU En-Ke, ZHU Bing-Sheng, LUO Jin-Sheng et al. Semi-conductor Physics, Beijing: Publishing House of ElectronicIndustry, 2005. 75(in Chinese)(刘恩科, 朱秉升, 罗晋生等. 半导体物理. 北京: 电子工业出版社, 2005. 75)10. Marinelli M, Milani E, Paoletti A et al. App. Phys. Lett.,1999, 75: 3216-321811. Foulon F, Pochet T, Gheeraert E et al. IEEE Trans. Nucl.Sci., 1994, 41(4): 92712. Hecht K. Z. Phys., 1932, 77: 23513. Pan L S, Kania D R. Diamond: Electronic Properties and Applications. London, Kluwer: Academic Publishers, 1993.241-25114. Dikinson W C, Lauzon A F, Neifert R D et al. Lowrence Radiation Laboratory, Livermore, Int. Rept. UOPB 63-113, 1963