Investigation on a solution to improve the irradiation reliability of SOI NMOSFET

YU Wen-Jie; ZHANG Zheng-Xuan; HE Wei; TIAN Hao; CHEN Ming; WANG Ru; BI Da-Wei; ZHANG Shuai; WANG Xi

doi:10.1088/1674-1137/32/12/009

Chinese Physics C> 2008, Vol. 32> Issue(12) : 989-991 DOI: 10.1088/1674-1137/32/12/009

Investigation on a solution to improve the irradiation reliability of SOI NMOSFET

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Abstract：
A solution is developed to improve the irradiation reliability of SOI NMOSFET (N-type Metal Oxide Semiconductor Field Effect Transistor). This solution, including SOI (Silicon On Insulator) wafer hardening and transistor structure hardening, protects the SOI circuit from total dose irradiation effect.

References

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YU Wen-Jie, ZHANG Zheng-Xuan, HE Wei, TIAN Hao, CHEN Ming, WANG Ru, BI Da-Wei, ZHANG Shuai and WANG Xi. Investigation on a solution to improve the irradiation reliability of SOI NMOSFET[J]. Chinese Physics C, 2008, 32(12): 989-991. doi: 10.1088/1674-1137/32/12/009

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Received: 2008-04-01
Revised: 2008-05-29

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Investigation on a solution to improve the irradiation reliability of SOI NMOSFET

Corresponding author: YU Wen-Jie,

Received Date: 2008-04-01

Accepted Date: 2008-05-29

Available Online: 2008-12-05

Abstract:

A solution is developed to improve the irradiation reliability of SOI NMOSFET (N-type Metal Oxide Semiconductor Field Effect Transistor). This solution, including SOI (Silicon On Insulator) wafer hardening and transistor structure hardening, protects the SOI circuit from total dose irradiation effect.

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Investigation on a solution to improve the irradiation reliability of SOI NMOSFET

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通讯作者: 陈斌, bchen63@163.com

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