A comparison of ionizing radiation damage in CMOS devices from <SUP>60</SUP>Co gamma rays, electrons and protons

HE Bao-Ping; YAO Zhi-Bin; ZHANG Feng-Qi

doi:10.1088/1674-1137/33/6/006

Chinese Physics C> 2009, Vol. 33> Issue(6) : 436-439 DOI: 10.1088/1674-1137/33/6/006

A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons

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Abstract：
Radiation hardened CC4007RH and non-radiation hardened CC4011 devices were irradiated using ⁶⁰Co gamma rays, 1 MeV electrons and 1—9 MeV protons to compare the ionizing radiation damage of the gamma rays with the charged particles. For all devices examined, with experimental uncertainty, the radiation induced threshold voltage shifts (ΔV_th) generated by ⁶⁰Co gamma rays are equal to that of 1 MeV electron and 1—7 MeV proton radiation under 0 gate bias condition. Under 5 V gate bias condition, the distinction of threshold voltage shifts (ΔV_th) generated by ⁶⁰Co gamma rays and 1 MeV electrons irradiation are not large, and the radiation damage for protons below 9 MeV is always less than that of ⁶⁰Co gamma rays. The lower energy the proton has, the less serious the radiation damage becomes.

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HE Bao-Ping, YAO Zhi-Bin and ZHANG Feng-Qi. A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons[J]. Chinese Physics C, 2009, 33(6): 436-439. doi: 10.1088/1674-1137/33/6/006

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Received: 2008-09-17
Revised: 2008-11-28

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons

Corresponding author: HE Bao-Ping,

Received Date: 2008-09-17

Accepted Date: 2008-11-28

Available Online: 2009-06-05

Abstract: Radiation hardened CC4007RH and non-radiation hardened CC4011 devices were irradiated using ⁶⁰Co gamma rays, 1 MeV electrons and 1—9 MeV protons to compare the ionizing radiation damage of the gamma rays with the charged particles. For all devices examined, with experimental uncertainty, the radiation induced threshold voltage shifts (ΔV_th) generated by ⁶⁰Co gamma rays are equal to that of 1 MeV electron and 1—7 MeV proton radiation under 0 gate bias condition. Under 5 V gate bias condition, the distinction of threshold voltage shifts (ΔV_th) generated by ⁶⁰Co gamma rays and 1 MeV electrons irradiation are not large, and the radiation damage for protons below 9 MeV is always less than that of ⁶⁰Co gamma rays. The lower energy the proton has, the less serious the radiation damage becomes.

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A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons

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A comparison of ionizing radiation damage in CMOS devices from 60Co gamma rays, electrons and protons

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A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons

A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons