Raman scattering investigation of C-doped a-SiO<SUB>2</SUB> after high energy heavy ion irradiations

LIU Chun-Bao; WANG Zhi-Guang

doi:10.1088/1674-1137/35/9/019

Chinese Physics C> 2011, Vol. 35> Issue(9) : 885-889 DOI: 10.1088/1674-1137/35/9/019

Raman scattering investigation of C-doped a-SiO₂ after high energy heavy ion irradiations

LIU Chun-Bao ^, ,
WANG Zhi-Guang ^,

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Abstract：
Thermally grown amorphous SiO₂ films were implanted at room temperature with 100 keV C-ions to 5.0×10¹⁷ or 1.2×10¹⁸ ions/cm². These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0×10¹¹, 1.0×10¹², 5.0×10¹² ions/cm², or with 308 MeV Xe-ions to 1.0×10¹², 1.0×10¹³, 1.0×10¹⁴ ions/cm², respectively. Then the samples were investigated using micro-Raman spectroscopy. From the obtained Raman spectra, we deduced that Si--C bonds and sp² carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO₂. Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the inclusion size decreased with increasing the irradiation fluence. The possible modification process of C-doped a-SiO₂ under swift heavy ion irradiations was briefly discussed.

References

[1]

Zacharias M, Christen J, Basing J et al. J. Non-Cryst. Soli., 1996, 115: 1982 WANG Z G, JIN Y F, XIE E Q et al. Nucl. Instrum. Methods B, 2002, 193: 6853 YU Y H, WONG S P, Wilson I H. Phys. Stat. Sol. A, 1998, 168: 5314 Pérez-Rodríguez A, Gozález-Varona O, Garrido B et al. J. Appl. Phys., 2003, 94: 2545 Garrido B, López M, FerréS et al. Nucl. Instrum. Methods B, 1996, 120: 1016 ZHAO J, MAO D S, LIN Z X et al. Appl. Phys. Lett., 1998, 73: 18387 WANG Z G, JIN Y F, XIE E Q et al. Nucl. Instrum. Methods B, 2003, 209: 2008 WANG Z G, ZHAO Z M, Benyagoub A et al. Nucl. Instrum. Methods B, 2007, 256: 2889 Neri F, Trusso S, Vasi C et al. Thin Solid Films, 1998, 332: 29010 Moura C, Cunha L, Hórfo et al. Surf. Coat. Tech., 2003, 174-175: 32411 Dimitrov D B, Papadimitriou D, Beshkov G. Diam. Relat. Mater., 1999, 8: 114812 HU Z H, LIAO X B, DIAO H W et al. J. Cryst. Growth, 2004, 264: 713 Veresa M, Koósa T M, Tóth S et al. Diam. Relat. Mater., 2005, 14: 105114 Beeman D, Silverman J, Lynds R et al. Phys. Rev. B, 1984, 30: 87015 Dillon R O, Woollam J A. Phys. Rev. B, 1984, 29(6): 348216 Ferrari A C, Rodil S E, Robertson J. Phys. Rev. B, 2003, 67: 15530617 Ferrari A C, Robertson J. Phys. Rev. B, 2000, 61: 1409518 LIU C B, WANG Z G , ZANG H et al. Chinese Physics C (HEP NP), 2008, 32(S2): 251

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[17]	Yu Lianzhi , Liu Lianshou , Cai Xu . Monte Carlo Investigation of the Fractal Structure of Multiparticle Production in High Energy Collisions. Chinese Physics C, 1992, 16(S2): 219-226.
[18]	Zhuang Pengfei , Liu Lianshou . Estimation of the Maximum Energy Density in High Energy Heavy Ion Collisions and the Space-time Region for the Formation of Quark Matter. Chinese Physics C, 1991, 15(S3): 297-305.
[19]	Liu Yiming , Huo Lei , Jiang Yuzhen , Wang Shan , D. Keane , S. Y. Fung , S. Y. Chu . Source Density Distribution and Intensity Interferometry in High-energy Heavy-ion Collisions. Chinese Physics C, 1991, 15(S1): 33-41.
[20]	Wu Yuanfang , Liu Lianshou . Investigation of the High Energy Limit in Hadron-Hadron Collision Using MEM. Chinese Physics C, 1989, 13(S3): 273-280.

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LIU Chun-Bao and WANG Zhi-Guang. Raman scattering investigation of C-doped a-SiO₂ after high energy heavy ion irradiations[J]. Chinese Physics C, 2011, 35(9): 885-889. doi: 10.1088/1674-1137/35/9/019

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Received: 2011-02-12
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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Raman scattering investigation of C-doped a-SiO₂ after high energy heavy ion irradiations

Corresponding author: LIU Chun-Bao,

Corresponding author: WANG Zhi-Guang,

Received Date: 2011-02-12

Accepted Date: 2011-02-02

Available Online: 2011-09-05

Abstract: Thermally grown amorphous SiO₂ films were implanted at room temperature with 100 keV C-ions to 5.0×10¹⁷ or 1.2×10¹⁸ ions/cm². These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0×10¹¹, 1.0×10¹², 5.0×10¹² ions/cm², or with 308 MeV Xe-ions to 1.0×10¹², 1.0×10¹³, 1.0×10¹⁴ ions/cm², respectively. Then the samples were investigated using micro-Raman spectroscopy. From the obtained Raman spectra, we deduced that Si--C bonds and sp² carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO₂. Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the inclusion size decreased with increasing the irradiation fluence. The possible modification process of C-doped a-SiO₂ under swift heavy ion irradiations was briefly discussed.

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Raman scattering investigation of C-doped a-SiO₂ after high energy heavy ion irradiations

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Raman scattering investigation of C-doped a-SiO₂ after high energy heavy ion irradiations

Corresponding author: LIU Chun-Bao,

Corresponding author: WANG Zhi-Guang,

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Raman scattering investigation of C-doped a-SiO2 after high energy heavy ion irradiations

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通讯作者: 陈斌, bchen63@163.com

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Raman scattering investigation of C-doped a-SiO2 after high energy heavy ion irradiations

Corresponding author: LIU Chun-Bao,

Corresponding author: WANG Zhi-Guang,

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Raman scattering investigation of C-doped a-SiO₂ after high energy heavy ion irradiations

Raman scattering investigation of C-doped a-SiO₂ after high energy heavy ion irradiations