<SUP>60</SUP>Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

WANG Yan-Ping; LUO Yin-Hong; WANG Wei; ZHANG Ke-Ying; GUO Hong-Xia; GUO Xiao-Qiang; WANG Yuan-Ming

doi:10.1088/1674-1137/37/5/056201

Chinese Physics C> 2013, Vol. 37> Issue(5) : 056201 DOI: 10.1088/1674-1137/37/5/056201

⁶⁰Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

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Abstract：
The testing techniques and experimental methods of the ⁶⁰Co gamma irradiation effect on AlGaN/AlN/GaN high electron mobility transistors (HEMTs) are established. The degradation of the electrical properties of the device under the actual radiation environment are analyzed theoretically, and studies of the total dose effects of gamma radiation on AlGaN/AlN/GaN HEMTs at three different radiation bias conditions are carried out. The degradation patterns of the main parameters of the AlGaN/AlN/GaN HEMTs at different doses are then investigated, and the device parameters that were sensitive to the gamma radiation induced damage and the total dose level induced device damage are obtained.

References

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WANG Yan-Ping, LUO Yin-Hong, WANG Wei, ZHANG Ke-Ying, GUO Hong-Xia, GUO Xiao-Qiang and WANG Yuan-Ming. ⁶⁰Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices[J]. Chinese Physics C, 2013, 37(5): 056201. doi: 10.1088/1674-1137/37/5/056201

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Received: 2012-04-18
Revised: 1900-01-01

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

⁶⁰Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

Received Date: 2012-04-18

Accepted Date: 1900-01-01

Available Online: 2013-05-05

Abstract: The testing techniques and experimental methods of the ⁶⁰Co gamma irradiation effect on AlGaN/AlN/GaN high electron mobility transistors (HEMTs) are established. The degradation of the electrical properties of the device under the actual radiation environment are analyzed theoretically, and studies of the total dose effects of gamma radiation on AlGaN/AlN/GaN HEMTs at three different radiation bias conditions are carried out. The degradation patterns of the main parameters of the AlGaN/AlN/GaN HEMTs at different doses are then investigated, and the device parameters that were sensitive to the gamma radiation induced damage and the total dose level induced device damage are obtained.

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⁶⁰Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

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⁶⁰Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices