Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation

SONG Yin; ZHANG Cong-Hong; WANG Zhi-Guang; ZHAO Zhi-Ming; DUAN Jin-Lai; YAO Cun-Feng

Chinese Physics C> 2005, Vol. 29> Issue(11) : 1112-1114

Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation

Institute of Modern Physics,CAS,Lanzhou 730000,China

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Abstract：
In the present work the photoluminescence (PL)character of sapphire implanted with He ions and subsequently irradiated with ²⁰⁸Pb²⁷⁺ of 1.1MeV/u was studied. Sapphire single crystals were implanted with 110keV He ions at 600K temperature to fluences ranging from (0.5 to 2)×10¹⁷ ions/cm², some of them were subsequently irradiated with ²⁰⁸ Pb²⁷⁺.From experimental results we found PL spectra peaks at 375nm, 413nm, and 450nm, and it's intensity gets maximum at fluence of 5×10¹⁶ He ions/cm². Also we found a new peak at 390nm after subsequent ²⁰⁸ Pb²⁷⁺ irradiation, which is possibly due to the crystallized sediment containing nano crystal Al₂O₃ appeared on the sample surface.

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SONG Yin, ZHANG Cong-Hong, WANG Zhi-Guang, ZHAO Zhi-Ming, DUAN Jin-Lai and YAO Cun-Feng. Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation[J]. Chinese Physics C, 2005, 29(11): 1112-1114.

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Received: 2005-01-24
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation

Corresponding author: SONG Yin,

Institute of Modern Physics,CAS,Lanzhou 730000,China

Received Date: 2005-01-24

Accepted Date: 1900-01-01

Available Online: 2005-11-05

Abstract: In the present work the photoluminescence (PL)character of sapphire implanted with He ions and subsequently irradiated with ²⁰⁸Pb²⁷⁺ of 1.1MeV/u was studied. Sapphire single crystals were implanted with 110keV He ions at 600K temperature to fluences ranging from (0.5 to 2)×10¹⁷ ions/cm², some of them were subsequently irradiated with ²⁰⁸ Pb²⁷⁺.From experimental results we found PL spectra peaks at 375nm, 413nm, and 450nm, and it's intensity gets maximum at fluence of 5×10¹⁶ He ions/cm². Also we found a new peak at 390nm after subsequent ²⁰⁸ Pb²⁷⁺ irradiation, which is possibly due to the crystallized sediment containing nano crystal Al₂O₃ appeared on the sample surface.

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Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation

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