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《中国物理C》(英文)编辑部
2024年10月30日

Growth BaTiO3 film using Laser-MBE and in-situ measurement with photoemission

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HONG Hao-Cai, WANG Jia-Ou, QIAN Hai-Jie, KUI Re-Xi and DONG Yu-Hui. Growth BaTiO3 film using Laser-MBE and in-situ measurement with photoemission[J]. Chinese Physics C, 2005, 29(S1): 43-46.
HONG Hao-Cai, WANG Jia-Ou, QIAN Hai-Jie, KUI Re-Xi and DONG Yu-Hui. Growth BaTiO3 film using Laser-MBE and in-situ measurement with photoemission[J]. Chinese Physics C, 2005, 29(S1): 43-46. shu
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Received: 2005-10-28
Revised: 1900-01-01
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Growth BaTiO3 film using Laser-MBE and in-situ measurement with photoemission

    Corresponding author: DONG Yu-Hui,
  • Beijing Synchrotron Radiation Facility of Institute of High Energy Physics, CAS, Beijing 100049, China

Abstract: We have performed in-situ synchrotron radiation photoemission spectrum (SRPES) on a well-order surface of BaTiO3 film fabricated with laser molecular beam epitaxy. The X-ray photoemission spectrum of Ti 2p indicate the Ti ion in BaTiO3 film is Ti+4 and the epitaxy film is stoichiometric composition with less oxygen vacancies. We calculated the valence density of state of BaTiO3 in ferroelectric phase with ab-intio code wien2k. The experiment spectrum is well consistent with our calculated result.

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