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《中国物理C》(英文)编辑部
2024年10月30日

ANALYSIS DEPTH PROFILING IN MATERALS BY ELASTIC RECOIL DETECTION

  • The elastic recoil detection (ERD) by using a 2.0—2.5MeV 4He ,ion beam has been employed to detect the depth profiling of hydrogen in the Silicon oxide and silicon nitride films.The correlation between the hydrogen content and the deposition condition is given.Maximum probing depth,detection limit and depth resolution are discussed under our experiment conditions.
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  • [1] W.A. Lanford et al., Appl. Phys. Lett., 28(1976). 566.[2] D. A. Leich T. A. Tombrello, Nucl. Instr. and Meth., 108(1973), 67.[3] J . L'Ecuyer et al., J . Appl. Phys., 47(1976), 881.[4] Cheng Huan-sheng et al., Nucl. Instr. and Meth., 218(1983), 601.[5] Ching-yea Wei, IEEE Trsnsaction on Electron Devices ED-27(1980), 170.[6] A. Turos and O. Meyer, Nucl. Instr. and Meth., 232 B4(1984),92 .[7] J. W. Mayer et al., Ion Beam Handbook (Academic Press, New York, 1977).[8] F. Paszti et al., Nrcl. Instr and meth., B15(1986), 486.
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LIU Shi-Jie, WU Yue, SHENG Kang-Long and LI Chun-Ying. ANALYSIS DEPTH PROFILING IN MATERALS BY ELASTIC RECOIL DETECTION[J]. Chinese Physics C, 1989, 13(6): 481-486.
LIU Shi-Jie, WU Yue, SHENG Kang-Long and LI Chun-Ying. ANALYSIS DEPTH PROFILING IN MATERALS BY ELASTIC RECOIL DETECTION[J]. Chinese Physics C, 1989, 13(6): 481-486. shu
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Received: 1900-01-01
Revised: 1900-01-01
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ANALYSIS DEPTH PROFILING IN MATERALS BY ELASTIC RECOIL DETECTION

    Corresponding author: LIU Shi-Jie,
  • Institute of High Energy,Academia Sinica,Beijing2 Institute of Nuclear Research Academia Sinica,Shanghai3 North China Electro-Optics Research Institute,Beijing

Abstract: The elastic recoil detection (ERD) by using a 2.0—2.5MeV 4He ,ion beam has been employed to detect the depth profiling of hydrogen in the Silicon oxide and silicon nitride films.The correlation between the hydrogen content and the deposition condition is given.Maximum probing depth,detection limit and depth resolution are discussed under our experiment conditions.

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