Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon

LIU Chang-Long

Chinese Physics C> 2004, Vol. 28> Issue(9) : 1013-1016

Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon

LIU Chang-Long ^,

Department of Physics,School of Science,Tianjin University,Tianjin 300072,China2 CERI/CNRS,3A rue de la Férollerie,45071 Orléans Cedex 2,France3 IMP/STMicroelectronics,16 rue Pierre et Marie Curie,B.P.7155,F37071 Tours Cedex,France

Abstract
HTML
Reference
Related

PDF

Abstract：
Crystalline silicon samples were first implanted at room temperature with 160keV He ions at a dose of 5×10¹⁶ions/cm².Some of these samples were then co-implanted with 80 keV Si ions to a dose of 5×10¹⁵ions/cm ²,or were co-treated with high density hydrogen plasma.Cross-sectional transmission electronic microscopy(XTEM)was used to study the growth of cavities after the subsequent annealing at 800℃ for 1 hour.Our results clearly show that both the Si implant and plasma hydrogenation can influence the growth of cavities in Si.In Si ion co-implanted sample,the cavities were found to shrink due to the presentation of excess of interstitial-like defects.However,additional plasma hydrogenation leads to enhancement in cavity growth.The results were qualitatively discussed.

References

[1]

. Raineri V, Saggio M, Rimini E.Mater. Res. , 2000, J15: 1449-14772. LIU Chang-Long et al.Mat . Res. Soc. Symp. Proc. , 2002, 719: 2293. Mayers S M, Petersen G A, Seager C H. Appl .Phys. , 1996, J80: 97174. Raneri V, Battaglia A,Rimini E. Nucl. Instrum. Methods, 1995, B96: 2495. Mayers S M, Follstaedt D M.Appl.Phys. , 1996, J79: 1337-13426. Raneri V, Fallica P G, Percolla G et al. Appl.Phys. , 1995, J78: 932277. Schroeder H.Fichtner P F P,Trinhaus H. in:Fundamental Aspects of In..ert Gases in Solids. Donnelly S E, Evans J H. Edited New York: Plenum Press, 1991, 279: 2898. Ziegler J P, Biersack J P, Littmark U. The Stopping and Range of Ions in Solids,New York: Pergamon, 19859. Eaglesham D J et al. Nucl. Instrum. Methods, 1995, B106: 19110. Giles L F et al .Nucl . Instrum.Methods, 1999, B148: 27311. Will iams J S et al.Appl. Phys.Lett. , 2000, 77: 428012. Schut H et al. Nucl. Inst rum.Methods, 2002, B186: 9413. Ulyashin A G, Job R, Fahrner W R et al . Diffusion and Defect s Dat a,Solid State Phenomena, 2002, B82- 84: 315! 31914. Sveinbjornsson E O et al Phys. Rev. , 1994, B58: 7801

[1]	CHEN Xiao-Fan . Test of Nonstatic Spherical Quark-Gluon Plasma by Two-Pion Interferometry. Chinese Physics C, 2007, 31(2): 173-176.
[2]	S.Biri , E.Fekete , I.Iván , I.Gál . Transformation of the ATOMKI-ECRIS into a Plasma Device. Chinese Physics C, 2007, 31(S1): 156-158.
[3]	G.D.Alton , H.Bilheux . Elementary Theory for Optimum Extraction of Space-Charge-Dominated Ion Beams from Plasma Boundaries. Chinese Physics C, 2007, 31(S1): 201-205.
[4]	A.V.Vodopyanov , S.V.Golubev , I.V.Izotov , V.I.Khizhnyak , D.A.Mansfeld , V.A.Skalyga , V.G.Zorin . ECR Plasma with 75 GHz Pumping. Chinese Physics C, 2007, 31(S1): 152-155.
[5]	HUA Jian-Fei , AN Wei-Ming , HUANG Wen-Hui , TANG Chuan-Xiang , LIN Yu-Zheng , GU Yu-Qiu , LIU Hong-Jie , WANG Xiang-Xian , ZHOU Wei-Min , JIAO Chun-Ye , WEN Tian-Shu , HE Ying-Ling , , , , . A Preliminary Experiment of Plasma Electron Acceleration at SILEX-1. Chinese Physics C, 2006, 30(S1): 108-110.
[6]	LUO Wen-Yun , WANG Chao-Zhuang , HE Xin-Fu , FAN Sheng , HUANG Xiao-Long , WANG Chuan-Shan . Non-ionizing Energy Loss of Middle Energy Proton in Si and GaAs. Chinese Physics C, 2006, 30(11): 1088-1090.
[7]	Fan Ying , REN Zhong-Zhou . Theoretical Studies on Electron Scattering of S and Si Isotopes. Chinese Physics C, 2006, 30(10): 983-987.
[8]	Efaaf M , ZHANG Wei-Ning , Khaliliasr M , JIN En-Pei , LIU Yi-Ming . Pion Interferometry for Spherical Quark-Gluon Plasma Evolution Sources. Chinese Physics C, 2005, 29(1): 46-49.
[9]	Efaaf M.J. , ZHANG Wei-Ning , Khaliliasr M. , HUO Lei , JIN En-Pei , ZHANG Jing-Bo . Pion Interferometry for Cylindrical Quark-Gluon Plasma Evolution Sources. Chinese Physics C, 2005, 29(5): 467-471.
[10]	WU Xiao-Shan , CAI Hong-Ling , TAN Wei-Shi , ZHAI Zhang-Yin , WU Zong-Hua , JIA Quan-Jie , ZHENG Hong-Xiang , JIANG Shu-Shen . Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in GeSi Epitaxy Layers on Si Wafer. Chinese Physics C, 2005, 29(S1): 24-27.
[11]	LIU Chang-Long . Effects of Hydrogen Plasma Treatment on Cavity Formation in Silicon Induced by He Ion Implantation. Chinese Physics C, 2005, 29(5): 524-529.
[12]	LONG Jia-Li , HE Ze-Jun , JIANG Wei-Zhou , MA Yu-Gang , LIU Bo . Dileptons from a Chemically Non-equilibrated Quark-Gluon Plasma. Chinese Physics C, 2004, 28(4): 387-391.
[13]	HE Qing , JIA Quan-Jie , JIANG Xiao-Ming , CUI Jian , JIANG Zui-Min . Study of Si Caplayer Influence on Microstructure of Ge/Si Quantum Dots by Grazing Incident X-Ray Diffraction. Chinese Physics C, 2003, 27(S1): 49-52.
[14]	WU Xiao-Shan , TAN Wei-Shi , JIANG Shu-Sheng , WU Zhong-Hua , DING Yong-Fan , . Microstructures of Ge/Si Superlattices Growtn at Low Temperature. Chinese Physics C, 2003, 27(8): 739-743.
[15]	ZHANG Han-Zhong , WANG En-Ke . Critical Behavior of Plasmon Damping Rate in Thermal Scalar Field. Chinese Physics C, 2002, 26(5): 522-529.
[16]	LIU Chang-Long . Effects of Ion Irradiation on the Diffusion of Pre-implanted B Atoms in Crystalline Silicon. Chinese Physics C, 2001, 25(12): 1238-1244.
[17]	WANG SuFang , Cavallaro Sl , JIN GenMing , Grzeszczuk A , Zipper W . Binary Reaction and Fusion Reaction in ²⁸Si+¹²C. Chinese Physics C, 2000, 24(10): 933-939.
[18]	Liu Changlong , Hou Mingdong , Zhu Zhiyong , Cheng Song , Li Baoquan , Sun Youmei , Wang Zhiguang , Jin Yunfan , Li Changlin , Wang Yinshu , Meng Qinghua . Paramagnetic Defect Production in Silicon After112MeV Ar Ion Irradiation. Chinese Physics C, 1998, 22(9): 858-863.
[19]	Hou Defu , Li Jiarong . On the Next to Leading Order Debye Screening Mass in QGP. Chinese Physics C, 1996, 20(6): 533-537.
[20]	Zhang Xiaofei , Li Jiarong . Calculation of Transport Coefficients for Colored Plasma Beyond the Abelian Dominance Approximation. Chinese Physics C, 1994, 18(11): 1043-1050.

Access

Get Citation

LIU Chang-Long. Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon[J]. Chinese Physics C, 2004, 28(9): 1013-1016.

LIU Chang-Long. Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon[J]. Chinese Physics C, 2004, 28(9): 1013-1016. shu

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2003-11-27
Revised: 1900-01-01

Article Metric

Article Views(4178)
PDF Downloads(575)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon

Corresponding author: LIU Chang-Long,

Department of Physics,School of Science,Tianjin University,Tianjin 300072,China2 CERI/CNRS,3A rue de la Férollerie,45071 Orléans Cedex 2,France3 IMP/STMicroelectronics,16 rue Pierre et Marie Curie,B.P.7155,F37071 Tours Cedex,France

Received Date: 2003-11-27

Accepted Date: 1900-01-01

Available Online: 2004-09-05

Abstract: Crystalline silicon samples were first implanted at room temperature with 160keV He ions at a dose of 5×10¹⁶ions/cm².Some of these samples were then co-implanted with 80 keV Si ions to a dose of 5×10¹⁵ions/cm ²,or were co-treated with high density hydrogen plasma.Cross-sectional transmission electronic microscopy(XTEM)was used to study the growth of cavities after the subsequent annealing at 800℃ for 1 hour.Our results clearly show that both the Si implant and plasma hydrogenation can influence the growth of cavities in Si.In Si ion co-implanted sample,the cavities were found to shrink due to the presentation of excess of interstitial-like defects.However,additional plasma hydrogenation leads to enhancement in cavity growth.The results were qualitatively discussed.

HTML

Reference (1)

Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article