Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon

LIU Chang-Long

Chinese Physics C> 2004, Vol. 28> Issue(9) : 1013-1016

Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon

LIU Chang-Long ^,

Department of Physics,School of Science,Tianjin University,Tianjin 300072,China2 CERI/CNRS,3A rue de la Férollerie,45071 Orléans Cedex 2,France3 IMP/STMicroelectronics,16 rue Pierre et Marie Curie,B.P.7155,F37071 Tours Cedex,France

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Crystalline silicon samples were first implanted at room temperature with 160keV He ions at a dose of 5×10¹⁶ions/cm².Some of these samples were then co-implanted with 80 keV Si ions to a dose of 5×10¹⁵ions/cm ²,or were co-treated with high density hydrogen plasma.Cross-sectional transmission electronic microscopy(XTEM)was used to study the growth of cavities after the subsequent annealing at 800℃ for 1 hour.Our results clearly show that both the Si implant and plasma hydrogenation can influence the growth of cavities in Si.In Si ion co-implanted sample,the cavities were found to shrink due to the presentation of excess of interstitial-like defects.However,additional plasma hydrogenation leads to enhancement in cavity growth.The results were qualitatively discussed.

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[1]

. Raineri V, Saggio M, Rimini E.Mater. Res. , 2000, J15: 1449-14772. LIU Chang-Long et al.Mat . Res. Soc. Symp. Proc. , 2002, 719: 2293. Mayers S M, Petersen G A, Seager C H. Appl .Phys. , 1996, J80: 97174. Raneri V, Battaglia A,Rimini E. Nucl. Instrum. Methods, 1995, B96: 2495. Mayers S M, Follstaedt D M.Appl.Phys. , 1996, J79: 1337-13426. Raneri V, Fallica P G, Percolla G et al. Appl.Phys. , 1995, J78: 932277. Schroeder H.Fichtner P F P,Trinhaus H. in:Fundamental Aspects of In..ert Gases in Solids. Donnelly S E, Evans J H. Edited New York: Plenum Press, 1991, 279: 2898. Ziegler J P, Biersack J P, Littmark U. The Stopping and Range of Ions in Solids,New York: Pergamon, 19859. Eaglesham D J et al. Nucl. Instrum. Methods, 1995, B106: 19110. Giles L F et al .Nucl . Instrum.Methods, 1999, B148: 27311. Will iams J S et al.Appl. Phys.Lett. , 2000, 77: 428012. Schut H et al. Nucl. Inst rum.Methods, 2002, B186: 9413. Ulyashin A G, Job R, Fahrner W R et al . Diffusion and Defect s Dat a,Solid State Phenomena, 2002, B82- 84: 315! 31914. Sveinbjornsson E O et al Phys. Rev. , 1994, B58: 7801

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LIU Chang-Long. Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon[J]. Chinese Physics C, 2004, 28(9): 1013-1016.

LIU Chang-Long. Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon[J]. Chinese Physics C, 2004, 28(9): 1013-1016. shu

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Received: 2003-11-27
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon

Corresponding author: LIU Chang-Long,

Department of Physics,School of Science,Tianjin University,Tianjin 300072,China2 CERI/CNRS,3A rue de la Férollerie,45071 Orléans Cedex 2,France3 IMP/STMicroelectronics,16 rue Pierre et Marie Curie,B.P.7155,F37071 Tours Cedex,France

Received Date: 2003-11-27

Accepted Date: 1900-01-01

Available Online: 2004-09-05

Abstract: Crystalline silicon samples were first implanted at room temperature with 160keV He ions at a dose of 5×10¹⁶ions/cm².Some of these samples were then co-implanted with 80 keV Si ions to a dose of 5×10¹⁵ions/cm ²,or were co-treated with high density hydrogen plasma.Cross-sectional transmission electronic microscopy(XTEM)was used to study the growth of cavities after the subsequent annealing at 800℃ for 1 hour.Our results clearly show that both the Si implant and plasma hydrogenation can influence the growth of cavities in Si.In Si ion co-implanted sample,the cavities were found to shrink due to the presentation of excess of interstitial-like defects.However,additional plasma hydrogenation leads to enhancement in cavity growth.The results were qualitatively discussed.

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Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon

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