Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection

  • Synchrotron radiation X-ray reflection method is used to study the depth distribution of Ge atoms in Si crystals caused by surface segregation during the MBE growth. The distribution of Ge atoms in Si crystal is found to have asymmetric exponential shape by simulating the experimental reflectivity based on X-ray reflection theory and Parratt method. The distribution decay lengths forward and backward along the growth direction are obtained as 8A and 3A, respectively, and do not change with different thicknesses of the Ge layers. The influences on X-ray reflectivity of different parameters, such as the thickness of the Si cap layer, the decay length, the surface roughness, and the thickness of SiO2 over the surface are discussed briefly.
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ZHENG Wen-Li, JIA Quan-Jie, JIANG Xiao-Ming and JIANG Zui-Min. Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection[J]. Chinese Physics C, 2001, 25(12): 1231-1237.
ZHENG Wen-Li, JIA Quan-Jie, JIANG Xiao-Ming and JIANG Zui-Min. Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection[J]. Chinese Physics C, 2001, 25(12): 1231-1237. shu
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Received: 2001-01-12
Revised: 1900-01-01
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Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection

    Corresponding author: ZHENG Wen-Li,
  • Institute of High Energy Physics, CAS, Beijing 100039, China2 Surface Physics Laboratory, Fudan University, Shanghai 200433, China

Abstract: Synchrotron radiation X-ray reflection method is used to study the depth distribution of Ge atoms in Si crystals caused by surface segregation during the MBE growth. The distribution of Ge atoms in Si crystal is found to have asymmetric exponential shape by simulating the experimental reflectivity based on X-ray reflection theory and Parratt method. The distribution decay lengths forward and backward along the growth direction are obtained as 8A and 3A, respectively, and do not change with different thicknesses of the Ge layers. The influences on X-ray reflectivity of different parameters, such as the thickness of the Si cap layer, the decay length, the surface roughness, and the thickness of SiO2 over the surface are discussed briefly.

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