A Method for Experimental Determination of the Sensitive Volume Thickness

  • A method of experimental determination of the sensitive volume(Sv)thickness d of micro-electronic devices is presented. It is based upon the deconvolution of the functions of heavy ion upset cross sections versus the range of the incidentions σseu(r), measured by varying the ion energy, and LET(r). The measured σseu(LET) and d can be used for accurate prediction of the rate of Single Event Effects (SEE) in space.
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  • [1] . McNulty P J, Abdel-Kader W G, Farrel G E. Radiat. Phys. Chem., 1994, 43: 139-1492.Barak J, Levinson J, Akkerman A et al. Proc. 3rd RADECS Conf., 1995, 431-4363.Roth D.R, McNulty P J, Abdel-Kader W G et al. IEEE Trans. Nucl. Sci., 1993, 40: 17214.Beauvais J, McNulty P J, Abdel-Kader W G et al. Proc. 2rd RADECS Conf., 1993, 5405.Zoutendyk J A, Smith L S, Soli G A. et al. IEEE Trans. Nucl. Sci., 1985, 32: 4164-4169; McNulty P J, Beauvais W J, Roth D R. IEEE Trans. Nucl. Sci., 1991, 38: 14636.Barak J, Levinson J, Akkerman A et al. Proc. 3rd RADECS Conf., 1995, 321-3257.EcoRet R, Duzellier S, Barak J et al. Proc. 4rd RADECS Conf., 1997, 5768.EcoRet R, Duzellier S. IEEE Trans. Nucl. Sci. 1997,44(6): 2378-23859.Inguimbert C et al. IEEE Trans. Nucl. Sci., 2000, 47(3):551-55810.LU Xiu-Qin et al. NUCL. TECH., 2003, 26(4): 271-274(in Chinses)(路秀琴等,核技术,2003,26(4):271-274
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LU Xiu-Qin, LIU Jian-Cheng, GUO Ji-Yu, ZHANG Qing-Xiang, HUANG Zhi, ZHANG Zhen-Long, GUO Gang, SHEN Dong-Jun, HUI Ning, NI Mei-Nan, KONG Fu-Quan and HAN Jian-Wei. A Method for Experimental Determination of the Sensitive Volume Thickness[J]. Chinese Physics C, 2004, 28(S1): 102-104.
LU Xiu-Qin, LIU Jian-Cheng, GUO Ji-Yu, ZHANG Qing-Xiang, HUANG Zhi, ZHANG Zhen-Long, GUO Gang, SHEN Dong-Jun, HUI Ning, NI Mei-Nan, KONG Fu-Quan and HAN Jian-Wei. A Method for Experimental Determination of the Sensitive Volume Thickness[J]. Chinese Physics C, 2004, 28(S1): 102-104. shu
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Received: 2004-12-30
Revised: 1900-01-01
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A Method for Experimental Determination of the Sensitive Volume Thickness

    Corresponding author: LU Xiu-Qin,
  • China Institute of Atomic Energy, Beijing 102413, China2 Centen for Space Science and Application Reseach, The Chinese Academy of Sciences, Beijing 100080, China

Abstract: A method of experimental determination of the sensitive volume(Sv)thickness d of micro-electronic devices is presented. It is based upon the deconvolution of the functions of heavy ion upset cross sections versus the range of the incidentions σseu(r), measured by varying the ion energy, and LET(r). The measured σseu(LET) and d can be used for accurate prediction of the rate of Single Event Effects (SEE) in space.

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