Analysis of Ramping Process of SSRF Booster

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LI Hao-Hu and LIU Gui-Min. Analysis of Ramping Process of SSRF Booster[J]. Chinese Physics C, 2006, 30(S1): 66-68.
LI Hao-Hu and LIU Gui-Min. Analysis of Ramping Process of SSRF Booster[J]. Chinese Physics C, 2006, 30(S1): 66-68. shu
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Received: 2005-12-07
Revised: 1900-01-01
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Analysis of Ramping Process of SSRF Booster

    Corresponding author: LI Hao-Hu,
  • Shanghai Institute of Applied Physics,CAS,Shanghai 201800,China

Abstract: The booster of the Shanghai Synchrotron Radiation Facility (SSRF) is designed to accelerate the electron beam from 100MeV to 3.5GeV in 250ms,with a repetition frequency of 2Hz. Its circumference is 180m with a periodicity of 28 FODO cell. Energy ramping in the booster synchrotron is the one of the important processes that will affect the beam parameters, the time structure and the injection efficiency of the storage ring. In this paper, the ramping process of the SSRF booster is described in detail, such as ramping curves of magnets and RF voltage, eddy current effect and chromaticity correction, phase space evolution during acceleration, etc.

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