Effects of Hydrogen Plasma Treatment on Cavity Formation in Silicon Induced by He Ion Implantation

LIU Chang-Long

Chinese Physics C> 2005, Vol. 29> Issue(5) : 524-529

Effects of Hydrogen Plasma Treatment on Cavity Formation in Silicon Induced by He Ion Implantation

LIU Chang-Long ^,

Department of Physics,School of Sciences,Tianjin University,Tianjin 300072,China2 Tianjin Key Laboratory of Low Dimension Materials Physics and Preparing Technology,Institute of Advanced Materials Physics Faculty of Science,Tianjin 3000723 CERI/CNRS,3A rue de la Férollerie,45071 Orléans Cedex 2,France4 LMP/STMicroelectronics,16 rue Pierre et Marie Curie,B.P.7155,F37071 Tours Cedex,France

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The effects of hydrogen plasma treatment on He-implantation-induced cavities in silicon during subsequent annealing were studied.Silicon samples were first implanted at room temperature with He ions of different energies (40,160 and 1550keV) at the same dose of 5×10¹⁶cm^-2,and then were exposed to high density ECR hydrogen plasma for 30 min at temperature of 250°C.XTEM was applied to study the formation of cavities after an annealing at 800°C for 1h. The results clearly show that the effects of plasma hydrogenation on thermal growth of cavities depend strongly on the He ion energy. No effects were clearly seen in 40 keV He-implantation-induced cavities and a slightly effects were observed in that of 1550 keV He implantation. However,in the case of 160 keV He implantation,additional H plasma treatment could assist the growth of cavities. Further analyses show that the effects were possibly related to the role of hydrogen introduced by plasma hydrogenation.

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[1]

.Chason E,Picraux S T,Poat e J M et al.Appl.Phys.,1997,J81:6513-65612.Griff ioen C C,Evans J H,de Jong P C et al.Nucl.Instrum.andMethods,1987,B27:417-4213.Follstaedt D M.Appl.Phys.Lett.,1993,62:1116-11184.Van Veen A,Reader A H,Gravest eijn D J et al.Thin Solid Films,1993,241:206-2105.Bruel M.Nucl.Instrum.Methods,1996,B108:313-3196.Godey S,Sauvage T,Ntsoenzok E et al.Appl.Phys.,2000,J87:2158-21617.LIU Chang..Long,Delamare R,Esidor N et al.Mat.Res.Soc.Symp.Proc.,2002,719:229-2348.Mayers S M,Petersen G A,Seager C H.Appl.Phys.,1996,J80:9717-97219.Wong..Leung J,Nygren E,Williams J S.Appl.Phys.Lett.,1995,67.:416-41810.Raneri V,Falica P G,Percolla G et al.Appl.Phys.,1995,J78:3727-373211.Raneri V,Saggio M,Rimini E.Mater.Res.,2000,J15:1449-147712.Corni F,Calzolzri G,Frabboni S et al.Appl.Phys.,1999,J85:1401-140813.Ziegler J P,Biersack J P,Littmark U.The Stopping and Range of Ionsin Solids.New York:Pergamon,198514.Schut H,Van VeenA,Ei jt SH et al.Nucl.Instrum.Methods,2002,B186:94-9915.Ulyashin A G,Job R,Fahrner W R et al.Diffusion and Defects Data,Solid State Phenomena,2002,B82 ! 84:315-31916.LIU C L,Ntsoenzok E,Barthe M F et al.Diffusion and Defects Data,Solid State Phenomena,2004,95 ! 96:307-31217.Peart on J,Corbert J W,Starola M.Hydrogen in Cryst alline Semicon..ductors.Springer..Verlag:Heidelberg,199218.Srikanth K,Ashok S.Appl.Phys.,1991,J70:4779-478519.Sveinbjornsson E O,Anderson G I,Engstrom O.Phys.Rev.,1994,B58:7801-7808

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LIU Chang-Long. Effects of Hydrogen Plasma Treatment on Cavity Formation in Silicon Induced by He Ion Implantation[J]. Chinese Physics C, 2005, 29(5): 524-529.

LIU Chang-Long. Effects of Hydrogen Plasma Treatment on Cavity Formation in Silicon Induced by He Ion Implantation[J]. Chinese Physics C, 2005, 29(5): 524-529. shu

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Received: 2004-07-30
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Effects of Hydrogen Plasma Treatment on Cavity Formation in Silicon Induced by He Ion Implantation

Corresponding author: LIU Chang-Long,

Department of Physics,School of Sciences,Tianjin University,Tianjin 300072,China2 Tianjin Key Laboratory of Low Dimension Materials Physics and Preparing Technology,Institute of Advanced Materials Physics Faculty of Science,Tianjin 3000723 CERI/CNRS,3A rue de la Férollerie,45071 Orléans Cedex 2,France4 LMP/STMicroelectronics,16 rue Pierre et Marie Curie,B.P.7155,F37071 Tours Cedex,France

Received Date: 2004-07-30

Accepted Date: 1900-01-01

Available Online: 2005-05-05

Abstract: The effects of hydrogen plasma treatment on He-implantation-induced cavities in silicon during subsequent annealing were studied.Silicon samples were first implanted at room temperature with He ions of different energies (40,160 and 1550keV) at the same dose of 5×10¹⁶cm^-2,and then were exposed to high density ECR hydrogen plasma for 30 min at temperature of 250°C.XTEM was applied to study the formation of cavities after an annealing at 800°C for 1h. The results clearly show that the effects of plasma hydrogenation on thermal growth of cavities depend strongly on the He ion energy. No effects were clearly seen in 40 keV He-implantation-induced cavities and a slightly effects were observed in that of 1550 keV He implantation. However,in the case of 160 keV He implantation,additional H plasma treatment could assist the growth of cavities. Further analyses show that the effects were possibly related to the role of hydrogen introduced by plasma hydrogenation.

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