Microstructures of Ge/Si Superlattices Growtn at Low Temperature

WU Xiao-Shan; TAN Wei-Shi; JIANG Shu-Sheng; WU Zhong-Hua; DING Yong-Fan

Chinese Physics C> 2003, Vol. 27> Issue(8) : 739-743

Microstructures of Ge/Si Superlattices Growtn at Low Temperature

Lab of Solid Slate Microstructures, Nanjing Univereity, Nanjing 210093, China2 Institute of High Energy Physics, CAS, Beijing 100039, China3 Center for Condensed Matter Science, Taiwan University, Taipei

Abstract
HTML
Reference
Related

PDF

Abstract：
Si/Ge superlattices were grown at low temperature with modified Stranski-Krastanov (SK) MBE method. X-ray specular, off-specular reflectivity, and X-ray transverse scattering measurements were done to characterize the structure of the Ge/Si superlat-tice. The fitted roughness and the thickness of the Ge-layer indicate that Ge may diffuse into Si-layer and form the inverted trapezium or nano-scaled hut at the Si/Ge interface. The inverted trapezium extends to form islands, which can be estimated from the volume of the Ge-Si alloy in the structure. These islands can be averaged as a Ge-Si alloy sub-layer, the averaged thickness was fitted from the pure X-ray specular reflectivity. The composition of Ge in the SiGe dots was estimated as 15%-25% by X-ray specular reflectivity and by the thickness of Ge sub-layer. These results were confirmed by TEM observation.

References

[1]

Thanh V Le, Yam V, Boueaud P et al. Phys. Rev., 1995, B60:58512 Schmidt O G, Kienzle O, Hao Y et al. Appl. Phys. Lett., 1999, 74:12723 Mateeva E, Sutter P, Lagally M G. Appl. Phys. Lett., 1999, 74:567 4 Schittenhelm P, Gail M, Brurmer Jet al. Growth, 1995, 157:2605 Sunamura H, Fukatsu S, Usami N et al. Growth, 1995, 157:265 6 LIU F, WU F, Lagally M G. Chem. Rev., 1997, 97:1045 7 CHENG H H, Chia C T, Markov V A. Thin Solid Films, 2000, 369:1828 Soo Y L, Kioseoglou G, Huang S. Appl. Phys. Lett., 2001, 78:3684 9 ZHENG Wen–Li, JIA Quan–Jie, JIANG Xiao–Ming et al. High Energy Phys. and Nucl. Phys., 2001, 25(12) : 1231–1237(in Chinese)(郑文莉等.高能物理与核物理,2001,25(12) :1231–1237) 10 WU X S, BIE Q S, LIN Z S et sl. Mod. Phys. Lett., B 1999, 13:325

[1]	Falih H. Al-Khudair . Low-lying states and isospin excitation in the Ge isotopes. Chinese Physics C, 2009, 33(7): 538-546. doi: 10.1088/1674-1137/33/7/007
[2]	WANG Mian , CHEN Yong-Shou , LI Zhi-Hong , LIU Wei-Ping , SHU Neng-Chuan . Calculation of astrophysical reaction rate of ⁸²Ge(n,γ)⁸³Ge. Chinese Physics C, 2009, 33(S1): 79-81. doi: 10.1088/1674-1137/33/S1/026
[3]	BAI Hong-Bo , DONG Hong-Fei , ZHANG Jin-Fu , LÜ Li-Jun , CAO Wan-Cang , LI Xiao-Wei , WANg Yin . Isospin structure in ⁶⁸Ge. Chinese Physics C, 2009, 33(S1): 40-42. doi: 10.1088/1674-1137/33/S1/013
[4]	LIU Yun-Hong , WANG Rong , CUI Xin-Yu , SUN Xu-Fang . Displacement damage dose approach to analyze ion irradiation effects on homemade GaAs/Ge solar cells. Chinese Physics C, 2008, 32(S2): 243-246.
[5]	ZHAI Chen-Yang , SUN Wei-Li , Efrem S , ZHANG Ben-Ai . ²⁸Si-Nucleon Scattering Analysis by the Coupled-Channel Optical Model with Dispersion Relation. Chinese Physics C, 2007, 31(3): 240-246.
[6]	LUO Wen-Yun , WANG Chao-Zhuang , HE Xin-Fu , FAN Sheng , HUANG Xiao-Long , WANG Chuan-Shan . Non-ionizing Energy Loss of Middle Energy Proton in Si and GaAs. Chinese Physics C, 2006, 30(11): 1088-1090.
[7]	HAO Jian-Kui , ZHAO Kui , ZHU Feng . Researches on Bake Effect on RF Superconducting Cavities. Chinese Physics C, 2005, 29(9): 918-922.
[8]	YU Zong-Qiang , ZHOU Hua-Shi , GAO Shu-Qi . Coherent X-Ray Scatter for Identifiction of Explosives. Chinese Physics C, 2005, 29(6): 619-622.
[9]	HU Shu-Xin , LI Da-Peng , MAI Zhen-Hong , LI Ming . Small Angle X-ray Scattering Study of the Influence of Temperature on the Structure of DNA/Lipid Complexes. Chinese Physics C, 2005, 29(S1): 4-7.
[10]	AN Yu-Kai , DAI Bo , MAI Zhen-Hong , CAI Jian-Wang , WU Zong-Hua . Elemental distribution at the interfaces of Ni₇₀Co₃₀/Cu magnetic multilayers by X-ray anomalous scattering. Chinese Physics C, 2005, 29(S1): 16-19.
[11]	ZHANG Hui , WANG Bao-Yi , ZHANG Zhe , WANG Ping , WEI Long , JIA Quan-Jie , WANG Yu-Zhu . Experimental studies on FeS₂ films prepared on Si (100) substrates by synchrotron radiation surface X-ray diffraction method. Chinese Physics C, 2005, 29(S1): 32-36.
[12]	LIU Chang-Long . Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon. Chinese Physics C, 2004, 28(9): 1013-1016.
[13]	CUI Shu-Fan , LUO Guang-Ming , YU Wen-Xue , CHEN Xiang-Ming , LIU Cui-Xiu , LI Ming , MAI Zhen-Hong , LU Hui-Bin , CHEN Zheng-Hao , JIA Quan-Jie , ZHENG Wen-Li , JIANG Xiao-Ming . Bragg Diffraction and Its Simulation of Ba TiO₃/SrTiO₃Superlattices. Chinese Physics C, 2001, 25(S1): 100-105.
[14]	ZHENG Wen-Li , JIA Quan-Jie , JIANG Xiao-Ming , JIANG Zui-Min . Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection. Chinese Physics C, 2001, 25(12): 1231-1237.
[15]	Li Yan , Gu Jiahui , Yu Xiaohan , Liu Jingyi , Cao Yuxiang , Zeng Jiping , Li Wenxin , Shi Shuanghui . Study of the Low Excited States of 72Ge. Chinese Physics C, 1999, 23(4): 320-327.
[16]	HAN Rong-Dian , WENG Hui-Min , ZHOU Xian-Yi , XU Ji-Hua , ZHU Jing-Sheng , LI Xiao-Guang , SHA Jian , WANG Jing-Cheng . Research for Crystallization of Metallic Glass Pd_79.5Ni₄Si_16.5 by Slow Positron Beam. Chinese Physics C, 1993, 17(4): 300-304.
[17]	WENG Hu-Min , ZHOU Xian-Yi , XU Ji-Hua , SUN Shi-Jun , ZHU Jing-Sheng , WU Shu-Lan , HAN Rong-Dian . Microstructure of A1/GaAs Interface Studied by Slow Positron Beam. Chinese Physics C, 1993, 17(9): 775-783.
[18]	ZHU Sheng-Jiang . Research on High Spin States in ⁶⁸Ge,⁶⁵Ga and ⁶⁷Ga. Chinese Physics C, 1992, 16(6): 539-545.
[19]	WANG Xi-Cang . THE STUDY OF THE STRUCTURE OF ¹⁰Be HYPERNUCLEUS. Chinese Physics C, 1989, 13(9): 842-848.
[20]	Wang De-an , Wang Yu-sheng , Zhou Ling . AN AUTOMATIC GENERAL-PURPOSE PROGRAM FOR FISSION PRODUCTS Ge (Li) GAMMA-RAY SPECTRA ANALYSIS-GSAP. Chinese Physics C, 1980, 4(2): 241-250.

Access

Get Citation

WU Xiao-Shan, TAN Wei-Shi, JIANG Shu-Sheng, WU Zhong-Hua, DING Yong-Fan and Microstructures of Ge/Si Superlattices Growtn at Low Temperature[J]. Chinese Physics C, 2003, 27(8): 739-743.

WU Xiao-Shan, TAN Wei-Shi, JIANG Shu-Sheng, WU Zhong-Hua, DING Yong-Fan and Microstructures of Ge/Si Superlattices Growtn at Low Temperature[J]. Chinese Physics C, 2003, 27(8): 739-743. shu

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2002-11-22
Revised: 1900-01-01

Article Metric

Article Views(3118)
PDF Downloads(584)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Microstructures of Ge/Si Superlattices Growtn at Low Temperature

Corresponding author: WU Xiao-Shan,

Lab of Solid Slate Microstructures, Nanjing Univereity, Nanjing 210093, China2 Institute of High Energy Physics, CAS, Beijing 100039, China3 Center for Condensed Matter Science, Taiwan University, Taipei

Received Date: 2002-11-22

Accepted Date: 1900-01-01

Available Online: 2003-08-05

Abstract: Si/Ge superlattices were grown at low temperature with modified Stranski-Krastanov (SK) MBE method. X-ray specular, off-specular reflectivity, and X-ray transverse scattering measurements were done to characterize the structure of the Ge/Si superlat-tice. The fitted roughness and the thickness of the Ge-layer indicate that Ge may diffuse into Si-layer and form the inverted trapezium or nano-scaled hut at the Si/Ge interface. The inverted trapezium extends to form islands, which can be estimated from the volume of the Ge-Si alloy in the structure. These islands can be averaged as a Ge-Si alloy sub-layer, the averaged thickness was fitted from the pure X-ray specular reflectivity. The composition of Ge in the SiGe dots was estimated as 15%-25% by X-ray specular reflectivity and by the thickness of Ge sub-layer. These results were confirmed by TEM observation.

HTML

Reference (1)

Microstructures of Ge/Si Superlattices Growtn at Low Temperature

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article