Microstructures of Ge/Si Superlattices Growtn at Low Temperature

WU Xiao-Shan; TAN Wei-Shi; JIANG Shu-Sheng; WU Zhong-Hua; DING Yong-Fan

Chinese Physics C> 2003, Vol. 27> Issue(8) : 739-743

Microstructures of Ge/Si Superlattices Growtn at Low Temperature

Lab of Solid Slate Microstructures, Nanjing Univereity, Nanjing 210093, China2 Institute of High Energy Physics, CAS, Beijing 100039, China3 Center for Condensed Matter Science, Taiwan University, Taipei

Abstract
HTML
Reference
Related

PDF

Abstract：
Si/Ge superlattices were grown at low temperature with modified Stranski-Krastanov (SK) MBE method. X-ray specular, off-specular reflectivity, and X-ray transverse scattering measurements were done to characterize the structure of the Ge/Si superlat-tice. The fitted roughness and the thickness of the Ge-layer indicate that Ge may diffuse into Si-layer and form the inverted trapezium or nano-scaled hut at the Si/Ge interface. The inverted trapezium extends to form islands, which can be estimated from the volume of the Ge-Si alloy in the structure. These islands can be averaged as a Ge-Si alloy sub-layer, the averaged thickness was fitted from the pure X-ray specular reflectivity. The composition of Ge in the SiGe dots was estimated as 15%-25% by X-ray specular reflectivity and by the thickness of Ge sub-layer. These results were confirmed by TEM observation.

References

[1]

Thanh V Le, Yam V, Boueaud P et al. Phys. Rev., 1995, B60:58512 Schmidt O G, Kienzle O, Hao Y et al. Appl. Phys. Lett., 1999, 74:12723 Mateeva E, Sutter P, Lagally M G. Appl. Phys. Lett., 1999, 74:567 4 Schittenhelm P, Gail M, Brurmer Jet al. Growth, 1995, 157:2605 Sunamura H, Fukatsu S, Usami N et al. Growth, 1995, 157:265 6 LIU F, WU F, Lagally M G. Chem. Rev., 1997, 97:1045 7 CHENG H H, Chia C T, Markov V A. Thin Solid Films, 2000, 369:1828 Soo Y L, Kioseoglou G, Huang S. Appl. Phys. Lett., 2001, 78:3684 9 ZHENG Wen–Li, JIA Quan–Jie, JIANG Xiao–Ming et al. High Energy Phys. and Nucl. Phys., 2001, 25(12) : 1231–1237(in Chinese)(郑文莉等.高能物理与核物理,2001,25(12) :1231–1237) 10 WU X S, BIE Q S, LIN Z S et sl. Mod. Phys. Lett., B 1999, 13:325

[1]	WANG Mian , CHEN Yong-Shou , LI Zhi-Hong , LIU Wei-Ping , SHU Neng-Chuan . Calculation of astrophysical reaction rate of ⁸²Ge(n,γ)⁸³Ge. Chinese Physics C, 2009, 33(S1): 79-81. doi: 10.1088/1674-1137/33/S1/026
[2]	BAI Hong-Bo , DONG Hong-Fei , ZHANG Jin-Fu , LÜ Li-Jun , CAO Wan-Cang , LI Xiao-Wei , WANg Yin . Isospin structure in ⁶⁸Ge. Chinese Physics C, 2009, 33(S1): 40-42. doi: 10.1088/1674-1137/33/S1/013
[3]	ZHAI Chen-Yang , SUN Wei-Li , Efrem S , ZHANG Ben-Ai . ²⁸Si-Nucleon Scattering Analysis by the Coupled-Channel Optical Model with Dispersion Relation. Chinese Physics C, 2007, 31(3): 240-246.
[4]	LUO Wen-Yun , WANG Chao-Zhuang , HE Xin-Fu , FAN Sheng , HUANG Xiao-Long , WANG Chuan-Shan . Non-ionizing Energy Loss of Middle Energy Proton in Si and GaAs. Chinese Physics C, 2006, 30(11): 1088-1090.
[5]	Fan Ying , REN Zhong-Zhou . Theoretical Studies on Electron Scattering of S and Si Isotopes. Chinese Physics C, 2006, 30(10): 983-987.
[6]	SHEN Da-Wa , YU Hui , WU Zong-Hua , HUANG Yong . The Morphology of CDA-g-PMMA Copolymers in Solution Studied by SR-SAXS. Chinese Physics C, 2005, 29(S1): 8-11.
[7]	HU Shu-Xin , LI Da-Peng , MAI Zhen-Hong , LI Ming . Small Angle X-ray Scattering Study of the Influence of Temperature on the Structure of DNA/Lipid Complexes. Chinese Physics C, 2005, 29(S1): 4-7.
[8]	AN Yu-Kai , DAI Bo , MAI Zhen-Hong , CAI Jian-Wang , WU Zong-Hua . Elemental distribution at the interfaces of Ni₇₀Co₃₀/Cu magnetic multilayers by X-ray anomalous scattering. Chinese Physics C, 2005, 29(S1): 16-19.
[9]	ZHANG Hui , WANG Bao-Yi , ZHANG Zhe , WANG Ping , WEI Long , JIA Quan-Jie , WANG Yu-Zhu . Experimental studies on FeS₂ films prepared on Si (100) substrates by synchrotron radiation surface X-ray diffraction method. Chinese Physics C, 2005, 29(S1): 32-36.
[10]	WU Xiao-Shan , CAI Hong-Ling , TAN Wei-Shi , ZHAI Zhang-Yin , WU Zong-Hua , JIA Quan-Jie , ZHENG Hong-Xiang , JIANG Shu-Shen . Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in GeSi Epitaxy Layers on Si Wafer. Chinese Physics C, 2005, 29(S1): 24-27.
[11]	LIU Chang-Long . Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon. Chinese Physics C, 2004, 28(9): 1013-1016.
[12]	HU Shu-Xin , LI Xiu-Hong , WU Lan-Sheng , JIA Quan-Jie , MAI Zhen-Hong , LI Ming . X-ray scattering of polymerizable lipid multilayers aligned at liquid-solid interfaces. Chinese Physics C, 2003, 27(S1): 53-56.
[13]	HE Qing , JIA Quan-Jie , JIANG Xiao-Ming , CUI Jian , JIANG Zui-Min . Study of Si Caplayer Influence on Microstructure of Ge/Si Quantum Dots by Grazing Incident X-Ray Diffraction. Chinese Physics C, 2003, 27(S1): 49-52.
[14]	XU Yan-Bing , LIAO Ji-Zhi . Studies on the HF States and the Negative Parity Bands of Even Even Ge and Se Nuclei. Chinese Physics C, 2002, 26(6): 613-619.
[15]	ZHENG Wen-Li , JIA Quan-Jie , JIANG Xiao-Ming , JIANG Zui-Min . Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection. Chinese Physics C, 2001, 25(12): 1231-1237.
[16]	Li Yan , Gu Jiahui , Yu Xiaohan , Liu Jingyi , Cao Yuxiang , Zeng Jiping , Li Wenxin , Shi Shuanghui . Study of the Low Excited States of 72Ge. Chinese Physics C, 1999, 23(4): 320-327.
[17]	An Zhu . Microscopic Analysis of Proton Scattering from ²⁸Si at 22MeV. Chinese Physics C, 1995, 19(10): 873-878.
[18]	WENG Hu-Min , ZHOU Xian-Yi , XU Ji-Hua , SUN Shi-Jun , ZHU Jing-Sheng , WU Shu-Lan , HAN Rong-Dian . Microstructure of A1/GaAs Interface Studied by Slow Positron Beam. Chinese Physics C, 1993, 17(9): 775-783.
[19]	ZHU Sheng-Jiang . Research on High Spin States in ⁶⁸Ge,⁶⁵Ga and ⁶⁷Ga. Chinese Physics C, 1992, 16(6): 539-545.
[20]	SHEN Wen-Qing , YIN Shu-Zhi , GUO Zhong-Yan , ZHU Yong-Tai , CHEN Ju-Shen , WU En-Jiu , GUO Chi-Di , FENG En-Pu , XIE Yuan-Xiang . A MEASUREMENT OF THE ELASTIC SCATTERING FOR REACTION ¹²C+²⁸Si AT ENERGIES 56MeV—69MeV. Chinese Physics C, 1984, 8(5): 628-632.

Access

Get Citation

WU Xiao-Shan, TAN Wei-Shi, JIANG Shu-Sheng, WU Zhong-Hua, DING Yong-Fan and Microstructures of Ge/Si Superlattices Growtn at Low Temperature[J]. Chinese Physics C, 2003, 27(8): 739-743.

WU Xiao-Shan, TAN Wei-Shi, JIANG Shu-Sheng, WU Zhong-Hua, DING Yong-Fan and Microstructures of Ge/Si Superlattices Growtn at Low Temperature[J]. Chinese Physics C, 2003, 27(8): 739-743. shu

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2002-11-22
Revised: 1900-01-01

Article Metric

Article Views(3031)
PDF Downloads(584)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Microstructures of Ge/Si Superlattices Growtn at Low Temperature

Corresponding author: WU Xiao-Shan,

Lab of Solid Slate Microstructures, Nanjing Univereity, Nanjing 210093, China2 Institute of High Energy Physics, CAS, Beijing 100039, China3 Center for Condensed Matter Science, Taiwan University, Taipei

Received Date: 2002-11-22

Accepted Date: 1900-01-01

Available Online: 2003-08-05

Abstract: Si/Ge superlattices were grown at low temperature with modified Stranski-Krastanov (SK) MBE method. X-ray specular, off-specular reflectivity, and X-ray transverse scattering measurements were done to characterize the structure of the Ge/Si superlat-tice. The fitted roughness and the thickness of the Ge-layer indicate that Ge may diffuse into Si-layer and form the inverted trapezium or nano-scaled hut at the Si/Ge interface. The inverted trapezium extends to form islands, which can be estimated from the volume of the Ge-Si alloy in the structure. These islands can be averaged as a Ge-Si alloy sub-layer, the averaged thickness was fitted from the pure X-ray specular reflectivity. The composition of Ge in the SiGe dots was estimated as 15%-25% by X-ray specular reflectivity and by the thickness of Ge sub-layer. These results were confirmed by TEM observation.

HTML

Reference (1)

Microstructures of Ge/Si Superlattices Growtn at Low Temperature

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article