Applications of Semiconductor Switches in Pulsed Power Technology

MENG Zhi-Peng; ZHANG Zi-Cheng; YANG Han-Wu; QIAN Bao-Liang

Chinese Physics C> 2008, Vol. 32> Issue(S1) : 277-279

Applications of Semiconductor Switches in Pulsed Power Technology

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Abstract：
Pulsed power technology has an important trend in the world, which has high power, long pulse, high operating frequency and miniaturization. Thus all-solid-state pulsed power technologies based on semiconductor devices have drawn more attention and widely used. This article introduces several kinds of semiconductor switches, such as SCR, IGBT, and SOS. The charging system based on SCR, the Marx generator, and pulsed transformer topology using IGBTs, and the system using SOS are described in detail. Some experimental results are also given. The use of semiconductor switches technology in solid state Marx generate can solve the disappointments such as short life time, low operating frequency, low reliability of conventional pulsed power equipments and has extensive perspective.

References

[1]

. LIU X S. High Pulsed Power Technology. Beijing: National Defense Industry Press, 2005(in Chinese)(刘锡三. 高功率脉冲功率技术. 北京: 国防工业出版社, 2005)2. Ju Won Baek, Member, IEEE, Dong Wook Yoo, Geun Hie Rim, Member, IEEE, and Jih-Sheng(Jason)Lai, Senior Member, IEEE,"Solid State Marx Generator Using Series-Connected IGBTs", IEEE Transctions on Plasma Science,2005, 33(4)3. Dr. Stephan Roche. Solid State Pulsed Power Systems, Physique Industrie, 17 rue de la rente Logerot, 21160 Marsannay la cote, France

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[20]	TAN LUN-CHANG . THE PULSE SHAPE DISCRIMINATION TECHNIQUE IN A PROPORTIONAL COUNTER. Chinese Physics C, 1979, 3(4): 400-407.

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MENG Zhi-Peng, ZHANG Zi-Cheng, YANG Han-Wu and QIAN Bao-Liang. Applications of Semiconductor Switches in Pulsed Power Technology[J]. Chinese Physics C, 2008, 32(S1): 277-279.

MENG Zhi-Peng, ZHANG Zi-Cheng, YANG Han-Wu and QIAN Bao-Liang. Applications of Semiconductor Switches in Pulsed Power Technology[J]. Chinese Physics C, 2008, 32(S1): 277-279. shu

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Received: 2008-01-11
Revised: 1900-01-01

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Applications of Semiconductor Switches in Pulsed Power Technology

Corresponding author: MENG Zhi-Peng,

Received Date: 2008-01-11

Accepted Date: 1900-01-01

Available Online: 2008-01-04

Abstract: Pulsed power technology has an important trend in the world, which has high power, long pulse, high operating frequency and miniaturization. Thus all-solid-state pulsed power technologies based on semiconductor devices have drawn more attention and widely used. This article introduces several kinds of semiconductor switches, such as SCR, IGBT, and SOS. The charging system based on SCR, the Marx generator, and pulsed transformer topology using IGBTs, and the system using SOS are described in detail. Some experimental results are also given. The use of semiconductor switches technology in solid state Marx generate can solve the disappointments such as short life time, low operating frequency, low reliability of conventional pulsed power equipments and has extensive perspective.

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Applications of Semiconductor Switches in Pulsed Power Technology

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通讯作者: 陈斌, bchen63@163.com

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