Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation

HE Wei; ZHANG Zheng-Xuan; ZHANG En-Xia; QIAN Cong; TIAN Hao; WANG Xi

Chinese Physics C> 2007, Vol. 31> Issue(4) : 388-390

Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation

Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China

Abstract
HTML
Reference
Related

PDF

Abstract：
The total dose response characteristics of the buried oxides (BOX) in separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers have been improved by implanting silicon ion into the BOX layers. NMOS/SOI transistors with enclosed-gate structure fabricated in SIMOX wafers were exposed to ⁶⁰Co γ-ray radiation. The total-dose radiation hardness of the BOX layers is characterized by the current voltage (I-V) measurements. The experimental results show that the implantation of silicon ion into the BOX layers can greatly reduce back channel threshold voltage shifts (ΔV_th), which increase the BOX layer hardness to total-dose irradiation.

References

[1]

. MA T P, Ressendorfer P V. Ionizing Radiation Effects in MOS Devices and Circuits. John Wiley Sons, Inc., 1989.47-86.2. Giraldo A, Paccagnella A, Minzoni A. Solid-State Electronics, 2000, 44: 981-989.3. Mcwhorter P J, Winokur P S. Appl. Phys. Lett., 1986,48(2): 133-135.4. LIU S T, Balster S, Sinha S et al. IEEE Trans. Nucl. Sci.,1999, 46(6): 1817-1823.5. Nicklaw C J, Pagey M P, Pantelides S T et al. IEEE Trans.Nucl. Sci., 2000, 47(6): 2269-2275.

[1]	QIAN Cong , ZHANG Zheng-Xuan , ZHANG Feng , LIN Cheng-Lu . Research on total-dose hardening for H-gate PD NMOSFET/SIMOX by ion implanting into buried oxide. Chinese Physics C, 2008, 32(2): 130-134. doi: 10.1088/1674-1137/32/2/011
[2]	YU Wen-Jie , WANG Ru , ZHANG Zheng-Xuan , QIAN Cong , HE Wei , TIAN Hao , CHEN Ming . Bias Dependence of Total Dose Effect of Partially Depleted SOI MOSFET. Chinese Physics C, 2007, 31(9): 819-822.
[3]	C.Bieth¹ , J.L.Delvaux² , F.Varenne³ , M.Duval³ , M.P.Bourgarel¹ , J.Fermé¹ . Studies and Design of a Dual Beam Axial Injection System Using H- Cusp Source and ECR Ion Source for He for IBA C70 Cyclotron. Chinese Physics C, 2007, 31(S1): 223-225.
[4]	GONG Hui , LI Jin , YANG Shi-Ming , SHAO Bei-Bei , GONG Guang-Hua , LI Yu-Xiong , XIE Xiao-Xi . Study of the Features of 400nm IMPL RADFET Dosimeter. Chinese Physics C, 2007, 31(3): 283-287.
[5]	LUO Yin-Hong , GONG Jian-Cheng , ZHANG Feng-Qi , GUO Hong-Xia , YAO Zhi-Bin , LI Yong-Hong , GUO Ning . Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment. Chinese Physics C, 2006, 30(1): 79-83.
[6]	ZHANG Hui , WANG Bao-Yi , ZHANG Zhe , WANG Ping , WEI Long , JIA Quan-Jie , WANG Yu-Zhu . Experimental studies on FeS₂ films prepared on Si (100) substrates by synchrotron radiation surface X-ray diffraction method. Chinese Physics C, 2005, 29(S1): 32-36.
[7]	LI Jia-Xing , WANG Jian-Song , GUO Zhong-Yan , XIAO Guo-Qing , ZHAN Wen-Long , SUN Zhi-Yu , WANG Meng , HU Zheng-Guo , CHEN Li-Xin , LI Chen , MAO Rui-Shi . Fitting the Data of Exotic Structural Nuclear Total Reaction Cross Section with a Corrected Glauber Model. Chinese Physics C, 2004, 28(10): 1050-1054.
[8]	LIU Chang-Long . Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon. Chinese Physics C, 2004, 28(9): 1013-1016.
[9]	DANG Bing-Rong , WEI Zeng-Quan , LI Wen-Jian . Calculating Dose-Depth Curve of Intermediate Energy Heavy lon. Chinese Physics C, 2002, 26(4): 430-434.
[10]	GUO Wen-Jun , JIANG Huan-Qing , LIU Jian-Ye . Improved Glauber Theory and the Total Reaction Cross Section of the Nucleus-Nucleus Collision. Chinese Physics C, 2001, 25(11): 1092-1099.
[11]	GUO Hong-Xia , CHEN Yu-Sheng , ZHANG Yi-Men , ZHOU Hui , HAN Fu-Bin , GUAN Ying , GONG Jian-Chen . Experimental Study of X-Ray Induced Dose Enhancement Effect Using Synchrotron Radiation. Chinese Physics C, 2001, 25(S1): 1-6.
[12]	ZHANG DongQing , CUI MingQi , ZHU PeiPing , ZHAO YiDong , CUI CongWu . Self-calibration of Silicon Photodiode in the Soft X Ray Spectral Range. Chinese Physics C, 2000, 24(6): 578-584.
[13]	LI Cheng , CHEN HongFang , WU Chong , ZHANG YongMing , XU ZiZong , LE Yi , SHAO ChuanFen , SHI ChangXin . Radiation Hardness Properties of MSM Structure Gallium Arsenide Detectors. Chinese Physics C, 2000, 24(5): 431-438.
[14]	SHAO Ming , CHEN HongFang , LI Cheng , CHEN Hui , XU ZiZong , WANG ZhaoMin . Testing the Radiation Hardness of Lead Tungstate Scintilating Crystals. Chinese Physics C, 2000, 24(6): 554-559.
[15]	Xia Shaojian . Studies on Liquid Nitrogen Cooling of Silicon Crystal Monochromator. Chinese Physics C, 1997, 21(7): 664-667.
[16]	Liu Hang , Liu Jianye , Zhang Shaoguang , Li Junqing . Multifragmentation Process in HIC Simulated by Modified Quantum Molecular Dynamics. Chinese Physics C, 1995, 19(11): 1040-1046.
[17]	WANG Zhao-Min , LI Cheng , CHEN Hong-Fang , XU Zi-Zong . Researcn on Properties of Localization in Inclined MWPC With Radial Cathode Strips Using the Induced Charge Center-of Gravity Read-out. Chinese Physics C, 1993, 17(8): 685-691.
[18]	LI Jian-Ping , TANG Yue-Li , LIU Shu-Dong , JIANG Wen-Gui , LEI Chuan-Heng , SHAO Bei-Bei , LI Tie-Hui , CAI Xiao-Ping , ZHANG Qing-Jiang . Measurement of Radiation Dose Level of Synchrotron Radiation Experimental Hall of BEPC. Chinese Physics C, 1992, 16(2): 105-112.
[19]	WANG Shu-Hong , ZHOU Qing-Yi , WAN Heng-Fang , ZHANG Hua-Shun , XIAO Lian-Rong , XUE Jing-Xuan , JIN Qing-Shou , ZHANG Cheng-Xian , LUO Zi-Hua , KE Xue-Yao , LIU Dian-Kui , HE Wei-Ning . The Performance Improvement and Its Application of Beijing Proton Linac. Chinese Physics C, 1991, 15(8): 680-688.
[20]	. CHARGED PARTICLE SPECTRA IN OXYGEN-INDUCED REACTIONS AT 14.6 AND 60GeV/NUCLEON. Chinese Physics C, 1989, 13(10): 865-869.

Access

Get Citation

HE Wei, ZHANG Zheng-Xuan, ZHANG En-Xia, QIAN Cong, TIAN Hao and WANG Xi. Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation[J]. Chinese Physics C, 2007, 31(4): 388-390.

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2006-07-14
Revised: 2006-08-28

Article Metric

Article Views(3390)
PDF Downloads(675)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation

Corresponding author: HE Wei,

Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China

Received Date: 2006-07-14

Accepted Date: 2006-08-28

Available Online: 2007-04-05

Abstract: The total dose response characteristics of the buried oxides (BOX) in separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers have been improved by implanting silicon ion into the BOX layers. NMOS/SOI transistors with enclosed-gate structure fabricated in SIMOX wafers were exposed to ⁶⁰Co γ-ray radiation. The total-dose radiation hardness of the BOX layers is characterized by the current voltage (I-V) measurements. The experimental results show that the implantation of silicon ion into the BOX layers can greatly reduce back channel threshold voltage shifts (ΔV_th), which increase the BOX layer hardness to total-dose irradiation.

HTML

Reference (1)

Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article