Total dose radiation effects on SOI NMOS transistors with different layouts

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TIAN Hao, ZHANG Zheng-Xuan, HE Wei, YU Wen-Jie, WANG Ru and CHEN Ming. Total dose radiation effects on SOI NMOS transistors with different layouts[J]. Chinese Physics C, 2008, 32(8): 645-648. doi: 10.1088/1674-1137/32/8/011
TIAN Hao, ZHANG Zheng-Xuan, HE Wei, YU Wen-Jie, WANG Ru and CHEN Ming. Total dose radiation effects on SOI NMOS transistors with different layouts[J]. Chinese Physics C, 2008, 32(8): 645-648.  doi: 10.1088/1674-1137/32/8/011 shu
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Received: 2007-10-08
Revised: 2007-11-02
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Total dose radiation effects on SOI NMOS transistors with different layouts

    Corresponding author: TIAN Hao,

Abstract: 

Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor (SOI NMOS) transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen (SIMOX) substrate and tested using 10keV X-ray radiation sources. The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×106 rad(Si). The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures.

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