ELDRS and dose-rate dependence of vertical NPN transistor

ZHENG Yu-Zhan; LU Wu; REN Di-Yuan; WANG Gai-Li; YU Xue-Feng; GUO Qi

doi:10.1088/1674-1137/33/1/010

Chinese Physics C> 2009, Vol. 33> Issue(1) : 47-49 DOI: 10.1088/1674-1137/33/1/010

ELDRS and dose-rate dependence of vertical NPN transistor

Abstract
HTML
Reference
Related

PDF

Abstract：
The enhanced low-dose-rate sensitivity (ELDRS) and dose-rate dependence of vertical NPN transistors are investigated in this article. The results show that the vertical NPN transistors exhibit more degradation at low dose rate, and that this degradation is attributed to the increase on base current. The oxide trapped positive charge near the SiO₂-Si interface and interface traps at the interface can contribute to the increase on base current and the two-stage hydrogen mechanism associated with space charge effect can well explain the experimental results.

References

[1]

. Enlow R N, Pease R L, Combs W E. IEEE Trans. Nucl.Sci., 1991, 38(6): 13422. Johnston A H, Lee C I, Rax B G. IEEE Trans. Nucl. Sci.,1996, 43(6): 30493. Johnston A H, Swift G M, Rax B G. IEEE Trans. Nucl.Sci., 1994, 41(6): 24274. Titus J L, Emily D, Krieg J F et al. IEEE Trans. Nucl.Sci., 1999, 46(6): 16085. Rashkeev S N, Cirba C R, Fleetwood D M.IEEE Trans.Nucl. Sci., 2002, 49(6): 26506. Fleetwood D M. Microelectronics Reliability, 2002, 42μ5237. Hjalmarson H P, Pease R L et al. IEEE Trans. Nucl. Sci.,2003, 50(6): 19018. Fleetwood D M, Wu A et al. IEEE Trans. Nucl. Sci., 1996,43(6): 3032

[1]	Jie Wang , Yi Wang , Bo Xie , Pengfei Lv , Fuyue Wang , Baohong Guo , Dong Han , Yuanjing Li . Online aging study of a high rate MRPC. Chinese Physics C, 2016, 40(5): 056002. doi: 10.1088/1674-1137/40/5/056002
[2]	Mo-Han Liu , Wu Lu , Wu-Ying Ma , Xin Wang , Qi Guo , Cheng-Fa He , Ke Jiang , Xiao-Long Li , Ming-Zhu Xun . Total ionizing dose effects of domestic SiGe HBTs under different dose rates. Chinese Physics C, 2016, 40(3): 036003. doi: 10.1088/1674-1137/40/3/036003
[3]	YU Jing-Yi , WANG Zhe , CHEN Shao-Min . A precise calculation of delayed coincidence selection efficiency and accidental coincidence rate. Chinese Physics C, 2015, 39(5): 056201. doi: 10.1088/1674-1137/39/5/056201
[4]	HE Bao-Ping , YAO Zhi-Bin , SHENG Jiang-Kun , WANG Zu-Jun , HUANG Shao-Yan , LIU Min-Bo , XIAO Zhi-Gang . Study of the dose rate effect of 180 nm nMOSFETs. Chinese Physics C, 2015, 39(1): 016004. doi: 10.1088/1674-1137/39/1/016004
[5]	QIU Rui , ZHANG Hui , YANG Bo , James C , Sayed H , Michael B , LI Jun-Li . Dose estimation and shielding calculation for X-ray hazard at highintensity laser facilities. Chinese Physics C, 2014, 38(12): 129001. doi: 10.1088/1674-1137/38/12/129001
[6]	SHEN Shan-Wei , WANG Yan-Fang , SHU Hang , TANG Xiao , WEI Cun-Feng , SONG Yu-Shou , SHI Rong-Jian , WEI Long . Experimental measurement of radiation dose in a dedicated breast CT system. Chinese Physics C, 2014, 38(3): 038201. doi: 10.1088/1674-1137/38/3/038201
[7]	CHANG Wei , HE Yuan , WEN Liang-Hua , LI Chun-Long , XUE Zong-Heng , SONG Yu-Kun , ZHANG Rui , ZHU Zheng-Long , GAO Zheng , ZHANG Cong , SUN Lie-Peng , YUE Wei-Ming , ZHANG Sheng-Hu , YOU Zhi-Ming , Thomas Joseph . A vertical test system for China-ADS project injector Ⅱ superconducting cavities. Chinese Physics C, 2014, 38(5): 057001. doi: 10.1088/1674-1137/38/5/057001
[8]	WANG Xin-Hua , GUO Hai-Ping , MOU Yun-Feng , ZHENG Pu , LIU Rong , YANG Xiao-Fei , YANG Jian . Measurement of tritium production rate distribution fora fusion-fission hybrid conceptual reactor. Chinese Physics C, 2013, 37(5): 056202. doi: 10.1088/1674-1137/37/5/056202
[9]	ZHANG Lei , XIE Dong-Zhu , ZHANG Yan-Ping , GAO Yuan . Isospin dependence of nuclear multifragmentation in statistical model. Chinese Physics C, 2011, 35(6): 567-571. doi: 10.1088/1674-1137/35/6/011
[10]	LI Bin-Kang , YANG Shao-Hua , GUO Ming-An , WANG Kui-Lu , XIA Jing-Tao , LUO Tong-Ding . Design of a very high frame rate camera based on an asynchronous CCD driving method. Chinese Physics C, 2011, 35(6): 572-575. doi: 10.1088/1674-1137/35/6/012
[11]	GUAN Xing-Yin , SONG Zhao-Hui , HAN He-Tong . Fluence rate linear response limit of a scintillators to γ-rays. Chinese Physics C, 2011, 35(7): 656-659. doi: 10.1088/1674-1137/35/7/010
[12]	LU Wu , ZHENG Yu-Zhan , WANG Yi-Yuan , REN Di-Yuan , GUO Qi , WANG Zhi-Kuan , WANG Jian-An . Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors. Chinese Physics C, 2011, 35(2): 169-173. doi: 10.1088/1674-1137/35/2/012
[13]	WANG Mian , CHEN Yong-Shou , LI Zhi-Hong , LIU Wei-Ping , SHU Neng-Chuan . Calculation of astrophysical reaction rate of ⁸²Ge(n,γ)⁸³Ge. Chinese Physics C, 2009, 33(S1): 79-81. doi: 10.1088/1674-1137/33/S1/026
[14]	YAO Hong-Juan , ZHANG Tian-Jue , GUAN Feng-Ping , ZHONG Jun-Qing . Vertical focusing study in the central region of the CYCIAE-100 cyclotron. Chinese Physics C, 2009, 33(S2): 39-41. doi: 10.1088/1674-1137/33/S2/010
[15]	MO Xiao-Hu , ZHANG Jian-Yong , ZHANG Tian-Bao , ZHANG Qing-Jiang , Achasov Mikhail , FU Cheng-Dong , Muchnoi Nikolay , QIN Qing , QU Hua-Min , WANG Yi-Fang , WU Jing-Min , XU Jin-Qiang , YU Bo-Xiang . Measurement of radiation dose at the north interaction point of BEPCⅡ. Chinese Physics C, 2009, 33(10): 914-921. doi: 10.1088/1674-1137/33/10/017
[16]	TIAN Hao , ZHANG Zheng-Xuan , HE Wei , YU Wen-Jie , WANG Ru , CHEN Ming . Total dose radiation effects on SOI NMOS transistors with different layouts. Chinese Physics C, 2008, 32(8): 645-648. doi: 10.1088/1674-1137/32/8/011
[17]	Farshid Tabbakh , Azim Ahmadinyar . Analytical and statistical calculation of gamma dose rate for the accident of losing the shield for Tehran Research Reactor. Chinese Physics C, 2008, 32(11): 877-881. doi: 10.1088/1674-1137/32/11/006
[18]	Jia Huanyu , Cao Zhen , Zhang Huimin . Meteorological Effects on the Trigger Rate of Air Showers Observed with the Tibet Air Shower Array. Chinese Physics C, 1994, 18(S3): 235-242.
[19]	Luo Chuanwang , Huang Tao , Guo Xingheng , Li Jinping , Lu Goungru . Model Dependence of the BSW Approach. Chinese Physics C, 1994, 18(S2): 151-166.
[20]	Zhang Tianbao , Yang Guangming , Guo Baonian , Wang Haidong . Experimental Investigation of the Decay Rate of Orthopositronium. Chinese Physics C, 1992, 16(S2): 135-140.

Access

Get Citation

ZHENG Yu-Zhan, LU Wu, REN Di-Yuan, WANG Gai-Li, YU Xue-Feng and GUO Qi. ELDRS and dose-rate dependence of vertical NPN transistor[J]. Chinese Physics C, 2009, 33(1): 47-49. doi: 10.1088/1674-1137/33/1/010

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2008-04-01
Revised: 2008-05-30

Article Metric

Article Views(4505)
PDF Downloads(763)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

ELDRS and dose-rate dependence of vertical NPN transistor

Corresponding author: ZHENG Yu-Zhan,

Received Date: 2008-04-01

Accepted Date: 2008-05-30

Available Online: 2009-01-11

Abstract:

The enhanced low-dose-rate sensitivity (ELDRS) and dose-rate dependence of vertical NPN transistors are investigated in this article. The results show that the vertical NPN transistors exhibit more degradation at low dose rate, and that this degradation is attributed to the increase on base current. The oxide trapped positive charge near the SiO₂-Si interface and interface traps at the interface can contribute to the increase on base current and the two-stage hydrogen mechanism associated with space charge effect can well explain the experimental results.

HTML

Reference (1)

ELDRS and dose-rate dependence of vertical NPN transistor

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article