Radiation induced inter-device leakage degradation

Get Citation
HU Zhi-Yuan, LIU Zhang-Li, SHAO Hua, ZHANG Zheng-Xuan, NING Bing-Xu, CHEN Ming, BI Da-Wei and ZOU Shi-Chang. Radiation induced inter-device leakage degradation[J]. Chinese Physics C, 2011, 35(8): 769-773. doi: 10.1088/1674-1137/35/8/013
HU Zhi-Yuan, LIU Zhang-Li, SHAO Hua, ZHANG Zheng-Xuan, NING Bing-Xu, CHEN Ming, BI Da-Wei and ZOU Shi-Chang. Radiation induced inter-device leakage degradation[J]. Chinese Physics C, 2011, 35(8): 769-773.  doi: 10.1088/1674-1137/35/8/013 shu
Milestone
Received: 2010-11-17
Revised: 1900-01-01
Article Metric

Article Views(2383)
PDF Downloads(435)
Cited by(0)
Policy on re-use
To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Email This Article

Title:
Email:

Radiation induced inter-device leakage degradation

Abstract: The evolution of inter-device leakage current with total ionizing dose in transistors in 180 nm generation technologies is studied with an N-type poly-gate field device (PFD) that uses the shallow trench isolation as an effective gate oxide. The overall radiation response of these structures is determined by the trapped charge in the oxide. The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work, which demonstrates that the worst condition is the same as traditional NMOS transistors. Moreover, the two-dimensional technology computer-aided design simulation is used to understand the bias dependence.

    HTML

Reference (1)

目录

/

DownLoad:  Full-Size Img  PowerPoint
Return
Return