Raman scattering investigation of C-doped a-SiO<SUB>2</SUB> after high energy heavy ion irradiations

LIU Chun-Bao; WANG Zhi-Guang

doi:10.1088/1674-1137/35/9/019

Chinese Physics C> 2011, Vol. 35> Issue(9) : 885-889 DOI: 10.1088/1674-1137/35/9/019

Raman scattering investigation of C-doped a-SiO₂ after high energy heavy ion irradiations

LIU Chun-Bao ^, ,
WANG Zhi-Guang ^,

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Abstract：
Thermally grown amorphous SiO₂ films were implanted at room temperature with 100 keV C-ions to 5.0×10¹⁷ or 1.2×10¹⁸ ions/cm². These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0×10¹¹, 1.0×10¹², 5.0×10¹² ions/cm², or with 308 MeV Xe-ions to 1.0×10¹², 1.0×10¹³, 1.0×10¹⁴ ions/cm², respectively. Then the samples were investigated using micro-Raman spectroscopy. From the obtained Raman spectra, we deduced that Si--C bonds and sp² carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO₂. Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the inclusion size decreased with increasing the irradiation fluence. The possible modification process of C-doped a-SiO₂ under swift heavy ion irradiations was briefly discussed.

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LIU Chun-Bao and WANG Zhi-Guang. Raman scattering investigation of C-doped a-SiO₂ after high energy heavy ion irradiations[J]. Chinese Physics C, 2011, 35(9): 885-889. doi: 10.1088/1674-1137/35/9/019

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Received: 2011-02-12
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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Raman scattering investigation of C-doped a-SiO₂ after high energy heavy ion irradiations

Corresponding author: LIU Chun-Bao,

Corresponding author: WANG Zhi-Guang,

Received Date: 2011-02-12

Accepted Date: 2011-02-02

Available Online: 2011-09-05

Abstract: Thermally grown amorphous SiO₂ films were implanted at room temperature with 100 keV C-ions to 5.0×10¹⁷ or 1.2×10¹⁸ ions/cm². These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0×10¹¹, 1.0×10¹², 5.0×10¹² ions/cm², or with 308 MeV Xe-ions to 1.0×10¹², 1.0×10¹³, 1.0×10¹⁴ ions/cm², respectively. Then the samples were investigated using micro-Raman spectroscopy. From the obtained Raman spectra, we deduced that Si--C bonds and sp² carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO₂. Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the inclusion size decreased with increasing the irradiation fluence. The possible modification process of C-doped a-SiO₂ under swift heavy ion irradiations was briefly discussed.

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Raman scattering investigation of C-doped a-SiO₂ after high energy heavy ion irradiations

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Raman scattering investigation of C-doped a-SiO₂ after high energy heavy ion irradiations

Corresponding author: LIU Chun-Bao,

Corresponding author: WANG Zhi-Guang,

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Raman scattering investigation of C-doped a-SiO2 after high energy heavy ion irradiations

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Raman scattering investigation of C-doped a-SiO2 after high energy heavy ion irradiations

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Corresponding author: WANG Zhi-Guang,

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Raman scattering investigation of C-doped a-SiO₂ after high energy heavy ion irradiations

Raman scattering investigation of C-doped a-SiO₂ after high energy heavy ion irradiations