Evaluation and prediction of the degradation of space Si solar cells induced by a low-earth-orbit radiation environment

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GAO Xin, YANG Sheng-Sheng, FENG Zhan-Zu and ZHANG Lei. Evaluation and prediction of the degradation of space Si solar cells induced by a low-earth-orbit radiation environment[J]. Chinese Physics C, 2012, 36(9): 900-904. doi: 10.1088/1674-1137/36/9/019
GAO Xin, YANG Sheng-Sheng, FENG Zhan-Zu and ZHANG Lei. Evaluation and prediction of the degradation of space Si solar cells induced by a low-earth-orbit radiation environment[J]. Chinese Physics C, 2012, 36(9): 900-904.  doi: 10.1088/1674-1137/36/9/019 shu
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Received: 2011-11-01
Revised: 1900-01-01
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Evaluation and prediction of the degradation of space Si solar cells induced by a low-earth-orbit radiation environment

    Corresponding author: GAO Xin,

Abstract: Space-graded silicon solar cells are evaluated by 1 MeV and 2 MeV electron-irradiation. The mean degradation of the maximum power (Pmax) is presented and analyzed. The degradation at both electron energies has been correlated with the displacement damage dose (Dd). A good linearity between the electron Dd and the mean Pmax degradation is obtained. The concept of Dd has also been used to predict the Si solar cell response in a low-earth-orbit (Altitude 799 km, Inclination 99o) radiation environment, considering the shielded effect of a 120 μ m-thick silica coverglass on reducing the radiation. Compared with the on-orbit data from a Si solar array of a Chinese satellite (duration from April 2007 to July 2010), a good match can be found between the on-orbit data and the predicted results using Dd methodology, indicating the method is appropriate for evaluating the radiation damage of the solar cells, and also to provide a new technique for studying radiation effects on the optoelectronic detectors used in many high energy physics applications, where harsh radiation environments produce damage in optoelectronic device materials.

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