Modeling the applicability of linear energy transfer on single event upset occurrence

GENG Chao; LIU Jie; ZHANG Zhan-Gang; XI Kai; GU Song; HOU Ming-Dong; SUN You-Mei; DUAN Jing-Lai; YAO Hui-Jun; MO Dan; LUO Jie

doi:10.1088/1674-1137/37/6/066001

Chinese Physics C> 2013, Vol. 37> Issue(6) : 066001 DOI: 10.1088/1674-1137/37/6/066001

Modeling the applicability of linear energy transfer on single event upset occurrence

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Abstract：
Geant4 tools were used to model the single event upset (SEU) of static random access memory cells induced by heavy ion irradiation. Simulated results obtained in two different regions of incident ion energies have been compared in order to observe the SEU occurrence by energetic ions and their effects on the radial ionization profile of deposited energy density. The disagreement of SEU cross sections of device response and radial distribution of deposited energy density have been observed in both low energy and high energy regions with equal linear energy transfer (LET) which correspond to the both sides of the Bragg peak. In the low energy region, SEUs induced by heavy ions are more dependent upon the incident ion species and radial distribution of deposited energy density, as compared with the high energy region. In addition, the velocity effect of the incident ion in silicon in the high energy region provides valuable feedback for gaining insight into the occurrence of SEU.

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GENG Chao, LIU Jie, ZHANG Zhan-Gang, XI Kai, GU Song, HOU Ming-Dong, SUN You-Mei, DUAN Jing-Lai, YAO Hui-Jun, MO Dan and LUO Jie. Modeling the applicability of linear energy transfer on single event upset occurrence[J]. Chinese Physics C, 2013, 37(6): 066001. doi: 10.1088/1674-1137/37/6/066001

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Received: 2012-07-26
Revised: 1900-01-01

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Modeling the applicability of linear energy transfer on single event upset occurrence

Corresponding author: GENG Chao,

Corresponding author: LIU Jie,

Received Date: 2012-07-26

Accepted Date: 1900-01-01

Available Online: 2013-06-05

Abstract: Geant4 tools were used to model the single event upset (SEU) of static random access memory cells induced by heavy ion irradiation. Simulated results obtained in two different regions of incident ion energies have been compared in order to observe the SEU occurrence by energetic ions and their effects on the radial ionization profile of deposited energy density. The disagreement of SEU cross sections of device response and radial distribution of deposited energy density have been observed in both low energy and high energy regions with equal linear energy transfer (LET) which correspond to the both sides of the Bragg peak. In the low energy region, SEUs induced by heavy ions are more dependent upon the incident ion species and radial distribution of deposited energy density, as compared with the high energy region. In addition, the velocity effect of the incident ion in silicon in the high energy region provides valuable feedback for gaining insight into the occurrence of SEU.

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Modeling the applicability of linear energy transfer on single event upset occurrence

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