Study of the dose rate effect of 180 nm nMOSFETs

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HE Bao-Ping, YAO Zhi-Bin, SHENG Jiang-Kun, WANG Zu-Jun, HUANG Shao-Yan, LIU Min-Bo and XIAO Zhi-Gang. Study of the dose rate effect of 180 nm nMOSFETs[J]. Chinese Physics C, 2015, 39(1): 016004. doi: 10.1088/1674-1137/39/1/016004
HE Bao-Ping, YAO Zhi-Bin, SHENG Jiang-Kun, WANG Zu-Jun, HUANG Shao-Yan, LIU Min-Bo and XIAO Zhi-Gang. Study of the dose rate effect of 180 nm nMOSFETs[J]. Chinese Physics C, 2015, 39(1): 016004.  doi: 10.1088/1674-1137/39/1/016004 shu
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Received: 2014-03-17
Revised: 1900-01-01
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Study of the dose rate effect of 180 nm nMOSFETs

    Corresponding author: HE Bao-Ping,

Abstract: Radiation induced offstate leakage in the shallow trench isolation regions of SIMC 0.18 μm nMOSFETs is studied as a function of dose rate. A "true" dose rate effect (TDRE) is observed. Increased damage is observed at low dose rate (LDR) than at high dose rate (HDR) when annealing is taken into account. A new method of simulating radiation induced degradation in shallow trench isolation (STI) is presented. A comparison of radiation induced offstate leakage current in test nMOSFETs between total dose irradiation experiments and simulation results exhibits excellent agreement. The investigation results imply that the enhancement of the leakage current may be worse for the dose rate encountered in the environment of space.

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