Test of a fine pitch SOI pixel detector with laser beam

Get Citation
Yi Liu, Yunpeng Lu, Xudong Ju and Qun Ou-Yang. Test of a fine pitch SOI pixel detector with laser beam[J]. Chinese Physics C, 2016, 40(1): 016202. doi: 10.1088/1674-1137/40/1/016202
Yi Liu, Yunpeng Lu, Xudong Ju and Qun Ou-Yang. Test of a fine pitch SOI pixel detector with laser beam[J]. Chinese Physics C, 2016, 40(1): 016202.  doi: 10.1088/1674-1137/40/1/016202 shu
Milestone
Received: 2015-03-04
Fund

    Supported by National Natural Science Foundation of China (11375226)

Article Metric

Article Views(956)
PDF Downloads(164)
Cited by(0)
Policy on re-use
To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Email This Article

Title:
Email:

Test of a fine pitch SOI pixel detector with laser beam

    Corresponding author: Yi Liu,
    Corresponding author: Yunpeng Lu,
  • 1. State Key Laboratory of Particle Detection and Electronics, Beijing 100049, China
  • 2. Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
  • 3. University of Chinese Academy of Sciences, Beijing 100049, China
Fund Project:  Supported by National Natural Science Foundation of China (11375226)

Abstract: A silicon pixel detector with fine pitch size of 19 μm×19 μm, developed based on SOI (silicon-on-insulator) technology, was tested under the illumination of infrared laser pulses. As an alternative method for particle beam tests, the laser pulses were tuned to very short duration and small transverse profile to simulate the tracks of MIPs (minimum ionization particles) in silicon. Hit cluster sizes were measured with focused laser pulses propagating through the SOI detector perpendicular to its surface and most of the induced charge was found to be collected inside the seed pixel. For the first time, the signal amplitude as a function of the applied bias voltage was measured for this SOI detector, deepening understanding of its depletion characteristics.

    HTML

Reference (7)

目录

/

DownLoad:  Full-Size Img  PowerPoint
Return
Return