Effects of Additional Vacancy-Like Defects Produced by Ion Impealations on Boron Thermal Diffusion in Silicon

LIU Chang-Long; LU Yi-Ying; YIN LI

Chinese Physics C> 2005, Vol. 29> Issue(11) : 1107-1111

Effects of Additional Vacancy-Like Defects Produced by Ion Impealations on Boron Thermal Diffusion in Silicon

Department of Physics,School of Science,Tianjin University,Tianjin 300072,China2 Tianjin Key Laboratory of Low Dimension Materials Physics and Preparing Technology,Institute of Advanced Materials Physics Faculty of Sciences,Tianjin 300072,China

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Abstract：
The effects of additional vacancy-like defects on thermal diffusion of B atoms in silicon were investigated by using secondary ion mass spectroscopy. B atoms were introduced into silicon by 30keV B ion implantation at a dose of 2×10¹⁴cm^－2, while the additional vacancy-like defects were produced by two different ways. One was via 40 or 160keV He ion implantation at a dose of 5×10¹⁶cm－2 and followed by an annealing at 800°C for 1h, which produced a well-defined cavity band near the projected range of He ions. The other was via 0.5MeV F or O ion implantation at a dose of 5×10¹⁵cm^－2,which creates excess vacancy-like defects around the 1/2 projected range of F or O ions. Our results clearly show that the additional vacancy-like defects could suppress the boron diffusion during subsequent thermal annealing at 800°C for 30 min. The suppressing effects were found to depend on both the ion type and ion energy. The results were qualitatively discussed in combination with the results obtained by using transmission electron microscopy and Rutherford backscattering spectroscopy.

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[1]

. HofkerWK,Werner HW, Obsthoek D P et al. Appl. Phys.,1974, J4: 125—1342. Claverie A, Giles L F, Omri F et al. Nucl. Instrum. Meth-ods, 1999, B147: 1—123. Collart E J H, Weemers K, Cowern N E B et al. Nucl.Instrum. Methods, 1998, B139: 98—1074. Stolk P A, Gossmann H J, Eaglesham D J et al. Appl.Phys., 1997, J81: 6031—60505. Jone K S, Zhang L H, Krishnamoorthy V et al. Appl. Phys.Lett., 1996, 68: 2672—26746. LIU C L, Sealy B J, Nejim A et al. High Energy Physicsand Nuclear Physics, 2001, 25: 1238—1244(in Chinese)(刘昌龙，Sealy B J, Nejim A等.高能物理与核物理，2001，25:1238-1244)7. Current M I, Inoue M, Nakashimma S et al. Nucl. Instrum.Methods, 1993, B74: 175—1808. Beanland D G. Solid-State Electronics, 1978, 21: 537—5429. LIU C L. Nucl. Phys. Rev., 2001, 18: 164—168(in Chinese)(刘昌龙.原子核物理评论，2001, 18: 164-168)10. Cowern N E B, Alquier D, Omri M et al. Nucl. Instrum.Methods, 1999, B148: 257—26111. Griffioen C C, Evans J H, de Jong P C et al. Nucl. Instrum.Methods, 1987, B27: 417—42112. Raneri V, Saggio M, Rimini E. J. Mater. Res., 2000, 15:1449—147713. Mayers S M, Petersen G A, Seager C H. J. Appl. Phys.,1996, 80: 9717—972114. Williams J S, Ridgway M C, Conway M J et al. Nucl. In-strum. Methods, 2001, B178: 33—4015. Ziegler J P, Biersack J P, Littmark U. The Stopping andRange of Ions in Solids. New York: Pergamon, 198516. Cerofolini G F, Corni F, Frabboni S et al. Mater. Sci. Eng., 2000, 27: 1—5217. Liu C L, Alquier D, Cayrel F et al. Solid State Phenomena,2004, 95-96: 337—34218. Raneri V, Camoisano S U. Appl. Phys. Lett., 1996, 69:1783—178519. Nielsen B, Holland O W, Leung T C et al. J. Appl. Phys.,1993, 74: 1636—163920. Simpson P J, Vos M, Mitchell I V et al. Phys. Rev., 1991,B44: 12180—12187

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LIU Chang-Long, LU Yi-Ying and YIN LI. Effects of Additional Vacancy-Like Defects Produced by Ion Impealations on Boron Thermal Diffusion in Silicon[J]. Chinese Physics C, 2005, 29(11): 1107-1111.

LIU Chang-Long, LU Yi-Ying and YIN LI. Effects of Additional Vacancy-Like Defects Produced by Ion Impealations on Boron Thermal Diffusion in Silicon[J]. Chinese Physics C, 2005, 29(11): 1107-1111. shu

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Received: 2004-12-27
Revised: 1900-01-01

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Effects of Additional Vacancy-Like Defects Produced by Ion Impealations on Boron Thermal Diffusion in Silicon

Corresponding author: LIU Chang-Long,

Department of Physics,School of Science,Tianjin University,Tianjin 300072,China2 Tianjin Key Laboratory of Low Dimension Materials Physics and Preparing Technology,Institute of Advanced Materials Physics Faculty of Sciences,Tianjin 300072,China

Received Date: 2004-12-27

Accepted Date: 1900-01-01

Available Online: 2005-11-05

Abstract: The effects of additional vacancy-like defects on thermal diffusion of B atoms in silicon were investigated by using secondary ion mass spectroscopy. B atoms were introduced into silicon by 30keV B ion implantation at a dose of 2×10¹⁴cm^－2, while the additional vacancy-like defects were produced by two different ways. One was via 40 or 160keV He ion implantation at a dose of 5×10¹⁶cm－2 and followed by an annealing at 800°C for 1h, which produced a well-defined cavity band near the projected range of He ions. The other was via 0.5MeV F or O ion implantation at a dose of 5×10¹⁵cm^－2,which creates excess vacancy-like defects around the 1/2 projected range of F or O ions. Our results clearly show that the additional vacancy-like defects could suppress the boron diffusion during subsequent thermal annealing at 800°C for 30 min. The suppressing effects were found to depend on both the ion type and ion energy. The results were qualitatively discussed in combination with the results obtained by using transmission electron microscopy and Rutherford backscattering spectroscopy.

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Effects of Additional Vacancy-Like Defects Produced by Ion Impealations on Boron Thermal Diffusion in Silicon

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