Impact factor of Chinese Physics C is 3.6 in 2023 Impact factor of Chinese Physics C is 3.6 in 2022 2021 Impact Factor 2.944
Advanced Search
Chinese Physics C> 2004, Vol. 28> Issue(6) : 626-628 

Study of N+ Implanted SiC Thin Films by FTIR and PL Spectroscopy

  •  Institute of Modern Physics,The Chinese Academy of Sciences,Lanzhou 730000,China

  • SiC films were deposited on Si substrates by RF co-sputtering of the Si and C compound target and implanted by 120keV N ions. The structure, optical property of thin films were studied by Fourier transform infrared spectrum(FTIR) and photoluminescence(PL) spectroscopy. The obtained results suggested that carbon nitride single, double and triple bonds are formed in the N ions implanted SiC films, and the luminescence intensity depends strongly on the quantity of N ions.
  • 加载中

  • References

    [1] . 　YANG C Y et al . Amorphous and Crystalline Silicon Carbide Ⅳ Springer Verleg , Berlin , 1992 , 1292.　Chowdhury A K M S et al . Thin Solid Films , 1997 , 130 :308 —3093.　Popov C , Plass M F , Kassing R et al . Thin Solid Films , 1999 , 355 —356 :406 —4114.　WANG Y X et al . Chinese Journal of Semiconductors , 2001 , 22(10) :1277 —12835.　WANG Y Y, XUE H , GUO Y P et al . Chinese Journal of Semiconductors , 1999 , 20 (2) :1277 —1283

  • Access

    加载中

Get Citation
SONG Yin, JIN Yun-Fan, WANG Zhi-Guang, ZHANG Chong-Hong, ZHAO Zhi-Ming and DUAN Jing-Lai. Study of N+ Implanted SiC Thin Films by FTIR and PL Spectroscopy[J]. Chinese Physics C, 2004, 28(6): 626-628.
SONG Yin, JIN Yun-Fan, WANG Zhi-Guang, ZHANG Chong-Hong, ZHAO Zhi-Ming and DUAN Jing-Lai. Study of N+ Implanted SiC Thin Films by FTIR and PL Spectroscopy[J]. Chinese Physics C, 2004, 28(6): 626-628. shu
Milestone
Received: 2003-11-11
Revised: 1900-01-01
Article Metric

Article Views(3705)
PDF Downloads(576)
Cited by(0)
Policy on re-use
To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Email This Article

Title:
Email:

Study of N+ Implanted SiC Thin Films by FTIR and PL Spectroscopy

    Corresponding author: SONG Yin,
  • Institute of Modern Physics,The Chinese Academy of Sciences,Lanzhou 730000,China
  • Received Date: 2003-11-11
  • Accepted Date: 1900-01-01
  • Available Online: 2004-06-05

Abstract: SiC films were deposited on Si substrates by RF co-sputtering of the Si and C compound target and implanted by 120keV N ions. The structure, optical property of thin films were studied by Fourier transform infrared spectrum(FTIR) and photoluminescence(PL) spectroscopy. The obtained results suggested that carbon nitride single, double and triple bonds are formed in the N ions implanted SiC films, and the luminescence intensity depends strongly on the quantity of N ions.

    HTML

Reference (1)

目录

Link
IOPScience
SCOAP3
arXiv
Chinese Physical Society
Journal information
Introduction
Editorial Board
Others
Subscribe
Contact us
QQ: 1307685413
Tel: +86-010-88235947
Fax: +86-010-88233126
E-mail: cpc@ihep.ac.cn

  • CPC Website

  • IOP Website

  • CPC WeChat

Copyright © Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Beijing 100049, China 京ICP备05002789号-1

Supported by: Beijing Renhe Information Technology Co. Ltd  E-mail: info@rhhz.net

/

DownLoad:  Full-Size Img  PowerPoint
Return
Return