Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

  • Amorphous SiO2 thin films with about 400—500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0×1017, 5.0×1017 or 1.2×1018 ions/cm2, then irradiated at RT by 853 MeV Pb ions to 5.0×1011, 1.0×1012, 2.0×1012 or 5.0×1012 ions/cm2, respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0×1012 Pb-ions/cm2 irradiation produced huge blue and green light-emitters in 2.0×1017 C-ions/cm2 implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0×1017 carbon-ions/cm2 implanted samples, 2.0×1012 Pb-ions/cm2 irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0×1012 Pb-ions/cm2 irradiation could create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2×1018 carbon-ions/cm2 implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type of SiO2-based light-emission materials.
  • 加载中
  • [1] . Hayashi S, Nagareda T, Kanzawa Y et al. J. J. Appl. Phys.,1993, 32: 3840-38452. Mutti P, Ghislotti G, Bertoni S et al. Appl. Phys. Lett.,1995, 66: 851-8533. Choi W C, Lee M S, Kim E K et al. Appl. Phys. Lett.,1996, 69: 3402-34044. QIN G G, SONG H Z, ZHANG B R et al. Phys. Rev. B,1996, 54: 2548-25555. Sias U S, Amaral L, Behar M et al. Nucl. Instrum. Methods B, 2006, 242: 109-1136. Garrido B, Lopez M, Ferre S et al. Nucl. Instrum. Methods B, 1996, 120: 101-1057. Garrido B, Samitier J, Morante J R et al. Phys. Rev. B,1994, 49: 14845-148498. SONG H Z, BAO X M, LI N S et al. J. Appl. Phy., 1997,82: 4028-40329. YU Y H, WONG S P, Wilson I H. Phys. Stat. Sol. A, 1998,168: 531-53410. WANG Z G, JIN Y F, XIE E Q et al. Nucl. Instrum. Methods B, 2003,209: 200-20411. WANG Z G, LIU J, ZHU Z Y et al. Nucl. Instrum. MethodsB, 2002, 191: 396-40012. WANG Z G, XIE E Q, JIN Y F et al. Nucl. Instrum. Methods B, 2001, 179: 289-29313. Ziegler J F. Nucl. Instrum. Methods B, 2004, 219-220:1027-103614. ZHAO J, MAO D S, LIN Z X et al. Nucl. Instrum. MethodsB, 1999,149: 325-33015. Tohmon R, Shimogaishi Y, Mizuno H et al. Phys. Rev.Lett., 1989, 62: 1388-139116. LI F M, Nathan A. CCD Image Sensors in Deep-Ultraviolet. Heidelberg: Springer, 2005. 51-7917. Seol K S, Ohki Y, Nishikawa H et al. J. Appl. Phys., 1996,80: 6444-644718. Backes W H, Bobbert P A, Vanhaeringen W. Phys. Rev.B, 1994, 49: 7564-756819. WANG Z G, ZHAO Z M, Benyagoub A et al. Nucl. Instrum.Methods B, 2007, 256: 288-292
  • 加载中

Get Citation
LIU Chun-Bao, WANG Zhi-Guang, ZANG Hang, WEI Kong-Fang, YAO Cun-Feng, SHENG Yan-Bin, MA Yi-Zhun, A Benyagoub, M Toulemonde and JIN Yun-Fan. Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation[J]. Chinese Physics C, 2008, 32(S2): 251-254.
LIU Chun-Bao, WANG Zhi-Guang, ZANG Hang, WEI Kong-Fang, YAO Cun-Feng, SHENG Yan-Bin, MA Yi-Zhun, A Benyagoub, M Toulemonde and JIN Yun-Fan. Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation[J]. Chinese Physics C, 2008, 32(S2): 251-254. shu
Milestone
Received: 2008-07-17
Revised: 1900-01-01
Article Metric

Article Views(3446)
PDF Downloads(641)
Cited by(0)
Policy on re-use
To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Email This Article

Title:
Email:

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

    Corresponding author: LIU Chun-Bao,

Abstract: Amorphous SiO2 thin films with about 400—500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0×1017, 5.0×1017 or 1.2×1018 ions/cm2, then irradiated at RT by 853 MeV Pb ions to 5.0×1011, 1.0×1012, 2.0×1012 or 5.0×1012 ions/cm2, respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0×1012 Pb-ions/cm2 irradiation produced huge blue and green light-emitters in 2.0×1017 C-ions/cm2 implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0×1017 carbon-ions/cm2 implanted samples, 2.0×1012 Pb-ions/cm2 irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0×1012 Pb-ions/cm2 irradiation could create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2×1018 carbon-ions/cm2 implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type of SiO2-based light-emission materials.

    HTML

Reference (1)

目录

/

DownLoad:  Full-Size Img  PowerPoint
Return
Return