Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment

LUO Yin-Hong; GONG Jian-Cheng; ZHANG Feng-Qi; GUO Hong-Xia; YAO Zhi-Bin; LI Yong-Hong; GUO Ning

Chinese Physics C> 2006, Vol. 30> Issue(1) : 79-83

Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment

Northwestern Institute of Nuclear Technology,Xi'an 710024,China

Abstract
HTML
Reference
Related

PDF

Abstract：
The two in-circuit test systems, one is a HP4156 semiconductor parameter automation system for measuring steady total dose effect, another one is a system for measuring pulsed total dose effect, under different environment with working principle and technical specification are introduced in detail in the paper. The comparison study of total dose damage effects irradiated by Pulsed hard X ray and long pulsed γ-ray generated in Qiangguang-Ⅰaccelerator, and by ⁶⁰Co steady γ-ray on typical CMOS devices utilizing the two test systems has been performed, which lays a foundation for the further research of total dose effect on CMOS devices in the future.

References

[1]

. Oldham T R, Mclean F B. IEEE Trans. Nucl. Sci., 2003,50(3): 4832. MA T P, Dressendorfer P V. Ionizing Radiation E ects in MOS Devices and Circuits. New York, Wiley, 1989. 2923. Peyre D, Poirot P, Galliaid R. IEEE Trans. Nucl. Sci.,1992,50(6): 103-1074. Rattner S, Boesch H E. IEEE Trans. Nucl. Sci., 1986,33(3): 1051-10525. LAI Z W. Radiation Hardening Electronics-Radiation Effects and Hardening Technique. Beijing: National Defence Industry Press, 1998. 298-300(赖祖武等.抗辐射电f学-辐射效应及加固原理.北京:国防工业出版社,1998. 298-300)

Access

Get Citation

LUO Yin-Hong, GONG Jian-Cheng, ZHANG Feng-Qi, GUO Hong-Xia, YAO Zhi-Bin, LI Yong-Hong and GUO Ning. Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment[J]. Chinese Physics C, 2006, 30(1): 79-83.

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2005-04-09
Revised: 2005-05-27

Article Metric

Article Views(3901)
PDF Downloads(654)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment

Corresponding author: LUO Yin-Hong,

Northwestern Institute of Nuclear Technology,Xi'an 710024,China

Received Date: 2005-04-09
Accepted Date: 2005-05-27
Available Online: 2006-01-05

Abstract: The two in-circuit test systems, one is a HP4156 semiconductor parameter automation system for measuring steady total dose effect, another one is a system for measuring pulsed total dose effect, under different environment with working principle and technical specification are introduced in detail in the paper. The comparison study of total dose damage effects irradiated by Pulsed hard X ray and long pulsed γ-ray generated in Qiangguang-Ⅰaccelerator, and by ⁶⁰Co steady γ-ray on typical CMOS devices utilizing the two test systems has been performed, which lays a foundation for the further research of total dose effect on CMOS devices in the future.