Non-ionizing Energy Loss of Middle Energy Proton in Si and GaAs

LUO Wen-Yun; WANG Chao-Zhuang; HE Xin-Fu; FAN Sheng; HUANG Xiao-Long; WANG Chuan-Shan

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《中国物理C》（英文）编辑部

2024年10月30日

Chinese Physics C> 2006, Vol. 30> Issue(11) : 1088-1090

Non-ionizing Energy Loss of Middle Energy Proton in Si and GaAs

Shanghai Applied Radiation Institute, Shanghai University, Shanghai 201800, China2 China Institute of Atomic Energy, Beijing 102413, China

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Abstract：
The displacement damage effects due to Non-ionizing Energy Loss (NIEL) is one reason of device-malfunction in Space. The NIEL induced by proton with energies from 10MeV to 400MeV in Si and GaAs have been calculated using updated Monte-Carlo code SHIELD.

References

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. CHEN Shi-Bin, ZHANG Yi-Men, CHEN Yu-Sheng et al.HEP NP, 2001, 25(4): 365-370(in Chinese)(陈世彬, 张义门, 陈雨生等. 高能物理与核物理, 2001, 25(4): 365—370)2. Akkerman A, Barak J, Chadwick M B et al. RadiationPhysics and Chemistry, 2001, 62: 301-3103. Summers G P, Burke E A, Shapiro P et al. IEEE Trans.Nucl. Sci., 1993, 40: 1372-13794. Jun I, Xapsos M A, Messenger S R et al. IEEE Trans. Nucl. Sci., 2003, 50: 1924-19285. Dementyev A V, Sobolevsky N M. Radiation Measurements, 1999, 30: 553-5576. Ziegler J F, Biresack J P, Littmark U. The Stopping andRange of Ions in Solids. New York: Pergamon Press, 19857. Jun I et al. IEEE Trans. Nucl. Sci., 2004, 51: 3207-3210

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LUO Wen-Yun, WANG Chao-Zhuang, HE Xin-Fu, FAN Sheng, HUANG Xiao-Long and WANG Chuan-Shan. Non-ionizing Energy Loss of Middle Energy Proton in Si and GaAs[J]. Chinese Physics C, 2006, 30(11): 1088-1090.

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Received: 2006-01-24
Revised: 2006-05-26

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1.
沈阳化工大学材料科学与工程学院沈阳 110142

Non-ionizing Energy Loss of Middle Energy Proton in Si and GaAs

Corresponding author: HE Xin-Fu,

Shanghai Applied Radiation Institute, Shanghai University, Shanghai 201800, China2 China Institute of Atomic Energy, Beijing 102413, China

Received Date: 2006-01-24
Accepted Date: 2006-05-26
Available Online: 2006-11-05

Abstract: The displacement damage effects due to Non-ionizing Energy Loss (NIEL) is one reason of device-malfunction in Space. The NIEL induced by proton with energies from 10MeV to 400MeV in Si and GaAs have been calculated using updated Monte-Carlo code SHIELD.