Surface morphology of He-implanted single-crystalline silicon

Get Citation
LI Bing-Sheng, ZHANG Chong-Hong, ZHOU Li-Hong and YANG Yi-Tao. Surface morphology of He-implanted single-crystalline silicon[J]. Chinese Physics C, 2008, 32(S2): 255-258.
LI Bing-Sheng, ZHANG Chong-Hong, ZHOU Li-Hong and YANG Yi-Tao. Surface morphology of He-implanted single-crystalline silicon[J]. Chinese Physics C, 2008, 32(S2): 255-258. shu
Milestone
Received: 2008-07-17
Revised: 1900-01-01
Article Metric

Article Views(3695)
PDF Downloads(658)
Cited by(0)
Policy on re-use
To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Email This Article

Title:
Email:

Surface morphology of He-implanted single-crystalline silicon

    Corresponding author: LI Bing-Sheng,

Abstract: Single-crystalline Si (100) samples were implanted with 30 keV He2+ ions to doses ranging from 2.0×1016 to 2.0×1017ions /cm2 and subsequently thermally annealed at 800℃ for 30min. The morphological change of the samples with the increase of implantation dose was investigated using atomic force microscopy (AFM). It was found that oblate-shaped blisters with an average height around 4.0nm were found on the 2.0×1016 ions /cm2 implanted sample surface; spherical-shaped blisters with an average height around 10.0nm were found on the 5.0×1016 ions /cm2 implanted sample surface; strip-shaped and conical cracks were observed on the sample He-implanted to a dose of 1.0×1017 ions /cm2. Exfoliations occurred on the sample surface to a dose of 2.0×1017 ions /cm2. Mechanisms underlying the surface change were discussed.

    HTML

Reference (1)

目录

/

DownLoad:  Full-Size Img  PowerPoint
Return
Return