Surface morphology of He-implanted single-crystalline silicon
- Received Date: 2008-07-17
- Accepted Date: 1900-01-01
- Available Online: 2008-01-03
Abstract: Single-crystalline Si (100) samples were implanted with 30 keV He2+ ions to doses ranging from 2.0×1016 to 2.0×1017ions /cm2 and subsequently thermally annealed at 800℃ for 30min. The morphological change of the samples with the increase of implantation dose was investigated using atomic force microscopy (AFM). It was found that oblate-shaped blisters with an average height around 4.0nm were found on the 2.0×1016 ions /cm2 implanted sample surface; spherical-shaped blisters with an average height around 10.0nm were found on the 5.0×1016 ions /cm2 implanted sample surface; strip-shaped and conical cracks were observed on the sample He-implanted to a dose of 1.0×1017 ions /cm2. Exfoliations occurred on the sample surface to a dose of 2.0×1017 ions /cm2. Mechanisms underlying the surface change were discussed.