FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation

ZHAO Zhi-Ming; WANG Zhi-Guang; SONG Yin; JIN Yun-Fan; SUN You-Mei

Chinese Physics C> 2005, Vol. 29> Issue(8) : 824-829

FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation

Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China2 CIRIL,BP5133,14070 Caen Cedex 05,France3 The Graduated School of Chinese Academy of Sciences,Beijing 100049，China

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Abstract：
SiO₂ films were firstly implanted at room temperature (RT) with 120 keV C-ions to a dose of 2.0×1017, 5.0×1017 or 8.6×1017 C cm-2, and then the C-doped SiO₂ films were irradiated at RT with 950 MeV Pb ions to a fluence of 5.0×1011, 1.0×1012 or 3.8×1012 Pb cm-2, respectively. The Fourier Transformation Infrared (FTIR) spectra of these samples were measured using a Spectrum GX IR spectroscopy. From the obtained micro-FTIR Spectra, we found that significant chemical bonds such as Si-C and Si(C)-O-C bonds were formed in the C doped SiO₂ films after high-energy Pb ion irradiation. It was also found that CO₂ molecule was formed in the high dose C-doped SiO₂ films after large fluence Pb ion irradiations. The existence of a large number of Si-C bonding and CO₂ molecule implies that nano-sized Si cluster and/or SiC grains may form in the C doped SiO₂ films after high-energy Pb ion irradiation.

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ZHAO Zhi-Ming, WANG Zhi-Guang, SONG Yin, JIN Yun-Fan and SUN You-Mei. FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation[J]. Chinese Physics C, 2005, 29(8): 824-829.

ZHAO Zhi-Ming, WANG Zhi-Guang, SONG Yin, JIN Yun-Fan and SUN You-Mei. FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation[J]. Chinese Physics C, 2005, 29(8): 824-829. shu

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Received: 2004-11-25
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation

Corresponding author: ZHAO Zhi-Ming,

Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China2 CIRIL,BP5133,14070 Caen Cedex 05,France3 The Graduated School of Chinese Academy of Sciences,Beijing 100049，China

Received Date: 2004-11-25

Accepted Date: 1900-01-01

Available Online: 2005-08-05

Abstract: SiO₂ films were firstly implanted at room temperature (RT) with 120 keV C-ions to a dose of 2.0×1017, 5.0×1017 or 8.6×1017 C cm-2, and then the C-doped SiO₂ films were irradiated at RT with 950 MeV Pb ions to a fluence of 5.0×1011, 1.0×1012 or 3.8×1012 Pb cm-2, respectively. The Fourier Transformation Infrared (FTIR) spectra of these samples were measured using a Spectrum GX IR spectroscopy. From the obtained micro-FTIR Spectra, we found that significant chemical bonds such as Si-C and Si(C)-O-C bonds were formed in the C doped SiO₂ films after high-energy Pb ion irradiation. It was also found that CO₂ molecule was formed in the high dose C-doped SiO₂ films after large fluence Pb ion irradiations. The existence of a large number of Si-C bonding and CO₂ molecule implies that nano-sized Si cluster and/or SiC grains may form in the C doped SiO₂ films after high-energy Pb ion irradiation.

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FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation

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