Properties of a New Kind of MSM Structure Gallium Arsenide Detectors

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Le Yi, Li Cheng, Chen Hongfang, Zhang Yongming, Wang Xiaolian, Wang Ligang, Shao Chuanfen and Shi Changxin. Properties of a New Kind of MSM Structure Gallium Arsenide Detectors[J]. Chinese Physics C, 1998, 22(12): 1092-1099.
Le Yi, Li Cheng, Chen Hongfang, Zhang Yongming, Wang Xiaolian, Wang Ligang, Shao Chuanfen and Shi Changxin. Properties of a New Kind of MSM Structure Gallium Arsenide Detectors[J]. Chinese Physics C, 1998, 22(12): 1092-1099. shu
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Received: 1997-12-15
Revised: 1900-01-01
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Properties of a New Kind of MSM Structure Gallium Arsenide Detectors

    Corresponding author: Le Yi,
  • Department of Modern Physics. University of Science and Technology of China, Hefei 2300271 Institute of Microelectronic Technology, Shanghai Jiaotong University, shanghai 200030

Abstract: Properties of a new kind of double metal contact GaAs semiconductors have been investigated. We measured the spectra of 5.48MeV α particles from 241Am,122keV photons from 57Co and 2.27MeV MIPs from 90Sr and compared the cce and FWHM of a 3×3mm2 GaAs detector before and after 1300rad 662keV photons from 137Cs. The test results show that these new Metal-Semiconductor-Metal(MSW) structure semiconductor detectors not only have good particle detection ability at room temperature but also have excellent radiation hardiness.

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