Properties of CVD Diamond Film Detector

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WANG Lan, OUYANG Xiao-Ping, FAN Ru-Yu, JIN Yong-Jie, ZHANG Zhong-Bing, PAN Hong-Bo, LIU Lin-Yue, LV Fan-Xiu, BU Ren-An and LIU De-Min. Properties of CVD Diamond Film Detector[J]. Chinese Physics C, 2007, 31(12): 1112-1115.
WANG Lan, OUYANG Xiao-Ping, FAN Ru-Yu, JIN Yong-Jie, ZHANG Zhong-Bing, PAN Hong-Bo, LIU Lin-Yue, LV Fan-Xiu, BU Ren-An and LIU De-Min. Properties of CVD Diamond Film Detector[J]. Chinese Physics C, 2007, 31(12): 1112-1115. shu
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Received: 2007-01-04
Revised: 2007-03-27
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Properties of CVD Diamond Film Detector

    Corresponding author: WANG Lan,
  • Department of Engineering Physics, Tsinghua University, Beijing 100084, China2 Northwest Institute of Nuclear Technology, Xi'an 710613, China3 Materials College, University of Science and Technology Beijing, Beijing 100083, China4 Xi'an Jiaotong University, Xi'an 710049, China

Abstract: The dark current, charge collection efficiency and time response properties of CVD diamond film detectors are studied based on experiments and their theoretic analysis. The results shows: No PN or PIN junctions are needed when preparing diamond detectors; charge collection efficiency of the detector will be reduced by defects in film, and it increases and reaches saturation along with the increasing electric field between the two electrodes. The charge collection time of our diamond film detector is about 719ps, and the charge collection efficiency can reach the saturation value of 60.5% under the electric field of 2.5V/μm. Scattering of the lattice may slow the detector response, so it's necessary to improve CVD technology and choose diamond film with big grain size.

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