Study of silicon pixel sensor for synchrotron radiation detection

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Zhen-Jie Li, Yun-Cong Jia, Ling-Fei Hu, Peng Liu and Hua-Xiang Yin. Study of silicon pixel sensor for synchrotron radiation detection[J]. Chinese Physics C, 2016, 40(3): 036001. doi: 10.1088/1674-1137/40/3/036001
Zhen-Jie Li, Yun-Cong Jia, Ling-Fei Hu, Peng Liu and Hua-Xiang Yin. Study of silicon pixel sensor for synchrotron radiation detection[J]. Chinese Physics C, 2016, 40(3): 036001.  doi: 10.1088/1674-1137/40/3/036001 shu
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Received: 2015-04-16
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    Supported by Prefabrication Research of Beijing Advanced Photon Source (RD for BAPS) and National Natural Science Foundation of China (11335010)

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Study of silicon pixel sensor for synchrotron radiation detection

    Corresponding author: Hua-Xiang Yin,
  • 1. Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
  • 2. Key Lab. of Microelectronics Devices &
  • 3.  Key Lab. of Microelectronics Devices &
  • 4.  Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
Fund Project:  Supported by Prefabrication Research of Beijing Advanced Photon Source (RD for BAPS) and National Natural Science Foundation of China (11335010)

Abstract: The silicon pixel sensor (SPS) is one of the key components of hybrid pixel single-photon-counting detectors for synchrotron radiation X-ray detection (SRD). In this paper, the design, fabrication, and characterization of SPSs for single beam X-ray photon detection is reported. The designed pixel sensor is a p+-in-n structure with guard-ring structures operated in full-depletion mode and is fabricated on 4-inch, N type, 320 μupm thick, high-resistivity silicon wafers by a general Si planar process. To achieve high energy resolution of X-rays and obtain low dark current and high breakdown voltage as well as appropriate depletion voltage of the SPS, a series of technical optimizations of device structure and fabrication process are explored. With optimized device structure and fabrication process, excellent SPS characteristics with dark current of 2 nA/cm2, full depletion voltage <50 V and breakdown voltage >150 V are achieved. The fabricated SPSs are wire bonded to ASIC circuits and tested for the performance of X-ray response to the 1W2B synchrotron beam line of the Beijing Synchrotron Radiation Facility. The measured S-curves for SRD demonstrate a high discrimination for different energy X-rays. The extracted energy resolution is high (<20% for X-ray photon energy >10 keV) and the linear properties between input photo energy and the equivalent generator amplitude are well established. It confirmed that the fabricated SPSs have a good energy linearity and high count rate with the optimized technologies. The technology is expected to have a promising application in the development of a large scale SRD system for the Beijing Advanced Photon Source.

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