Total ionizing dose effects of domestic SiGe HBTs under different dose rates

  • The total ionizing radiation (TID) response of commercial NPN silicon germanium hetero-junction bipolar transistors (SiGe HBTs) produced domestically are investigated under dose rates of 800 mGy(Si)/s and 1.3 mGy(Si)/s with a Co-60 gamma irradiation source. The changes of transistor parameters such as Gummel characteristics, and excess base current before and after irradiation, are examined. The results of the experiments show that for the KT1151, the radiation damage is slightly different under the different dose rates after prolonged annealing, and shows a time dependent effect (TDE). For the KT9041, however, the degradations of low dose rate irradiation is higher than for the high dose rate, demonstrating that there is a potential enhanced low dose rate sensitivity (ELDRS) effect for the KT9041. The possible underlying physical mechanisms of the different dose rates responses induced by the gamma rays are discussed.
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Mo-Han Liu, Wu Lu, Wu-Ying Ma, Xin Wang, Qi Guo, Cheng-Fa He, Ke Jiang, Xiao-Long Li and Ming-Zhu Xun. Total ionizing dose effects of domestic SiGe HBTs under different dose rates[J]. Chinese Physics C, 2016, 40(3): 036003. doi: 10.1088/1674-1137/40/3/036003
Mo-Han Liu, Wu Lu, Wu-Ying Ma, Xin Wang, Qi Guo, Cheng-Fa He, Ke Jiang, Xiao-Long Li and Ming-Zhu Xun. Total ionizing dose effects of domestic SiGe HBTs under different dose rates[J]. Chinese Physics C, 2016, 40(3): 036003.  doi: 10.1088/1674-1137/40/3/036003 shu
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Received: 2015-04-07
Revised: 2015-10-14
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Total ionizing dose effects of domestic SiGe HBTs under different dose rates

    Corresponding author: Mo-Han Liu,
    Corresponding author: Wu Lu,
  • 1. Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
  • 2. School of Physics Science and Technology, Xinjiang University, Urumqi 830046, China
  • 3.  Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China

Abstract: The total ionizing radiation (TID) response of commercial NPN silicon germanium hetero-junction bipolar transistors (SiGe HBTs) produced domestically are investigated under dose rates of 800 mGy(Si)/s and 1.3 mGy(Si)/s with a Co-60 gamma irradiation source. The changes of transistor parameters such as Gummel characteristics, and excess base current before and after irradiation, are examined. The results of the experiments show that for the KT1151, the radiation damage is slightly different under the different dose rates after prolonged annealing, and shows a time dependent effect (TDE). For the KT9041, however, the degradations of low dose rate irradiation is higher than for the high dose rate, demonstrating that there is a potential enhanced low dose rate sensitivity (ELDRS) effect for the KT9041. The possible underlying physical mechanisms of the different dose rates responses induced by the gamma rays are discussed.

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