Data of Bunching Parameter and Correlator in 400GeV/c pp Collisions

  • The bunching parameters and bunching correlators have been calculated by using the pseudorapidity and azimuthal angle distribuhons of charged prides produced in pp collisions at 400GeV/c. The results show that the values of bunching parameter depend not only on the width of mulhplicity distribuhon. but also on the correlation of particles. The bunching parameters η2 (M) and η3 (M) follow the same power-law behavior in pseudorapidity and azimuthal angle spaces indicating that the multifractal structure in pp collisions at 400GeV/c is observed. The values of the second-order bunching correlators in pseudorapidity space depend on the width of multiplicity distribuhons and decrease with increasing bin-bin disuse D.
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Wang Shaoshun, Liu Ran Wang and Zhaonmin. Data of Bunching Parameter and Correlator in 400GeV/c pp Collisions[J]. Chinese Physics C, 1999, 23(12): 1135-1140.
Wang Shaoshun, Liu Ran Wang and Zhaonmin. Data of Bunching Parameter and Correlator in 400GeV/c pp Collisions[J]. Chinese Physics C, 1999, 23(12): 1135-1140. shu
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Received: 1998-12-17
Revised: 1900-01-01
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Data of Bunching Parameter and Correlator in 400GeV/c pp Collisions

    Corresponding author: Wang Shaoshun,
  • Departwnt of Modern Physics, University of Science and Technology of China, Hefei 230027

Abstract: The bunching parameters and bunching correlators have been calculated by using the pseudorapidity and azimuthal angle distribuhons of charged prides produced in pp collisions at 400GeV/c. The results show that the values of bunching parameter depend not only on the width of mulhplicity distribuhon. but also on the correlation of particles. The bunching parameters η2 (M) and η3 (M) follow the same power-law behavior in pseudorapidity and azimuthal angle spaces indicating that the multifractal structure in pp collisions at 400GeV/c is observed. The values of the second-order bunching correlators in pseudorapidity space depend on the width of multiplicity distribuhons and decrease with increasing bin-bin disuse D.

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